IRF5NJZ34 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF5NJZ34
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 252 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SMD-0.5
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IRF5NJZ34 Datasheet (PDF)
irf5njz34.pdf

PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast
irf5njz48.pdf

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
irf5nj3315.pdf

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5nj9540.pdf

PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with
Otros transistores... IRF5N3710 , IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRF5NJ5305 , IRF5NJ540 , IRF5NJ6215 , IRF5NJ9540 , IRF9640 , IRF5NJZ48 , IRF5Y1310CM , IRF5Y31N20 , IRF5Y3315CM , IRF5Y3710CM , IRF5Y5305CM , IRF5Y540CM , IRF5Y6215CM .
History: TK16A60W5 | NP88N04DHE | VQ1000P | QM7018AD | AOL1412
History: TK16A60W5 | NP88N04DHE | VQ1000P | QM7018AD | AOL1412



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