IRF5Y9540CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF5Y9540CM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 109 nC
   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 428 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
   Paquete / Cubierta: TO-257AA

Búsqueda de reemplazo de MOSFET IRF5Y9540CM

IRF5Y9540CM Datasheet (PDF)

..1. Size:103K international rectifier
irf5y9540cm.pdf

PD - 94027AHEXFET POWER MOSFET IRF5Y9540CMTHRU-HOLE (TO-257AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y9540CM -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatur

9.1. Size:103K international rectifier
irf5y3205cm.pdf

PD - 94179AHEXFET POWER MOSFET IRF5Y3205CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.022 18A* IRF5Y3205CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features

9.2. Size:159K international rectifier
irf5y6215cm.pdf

PD-94165AHEXFET POWER MOSFET IRF5Y6215CMTHRU-HOLE (TO-257AA)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y6215CM -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

9.3. Size:105K international rectifier
irf5y1310cm.pdf

PD - 94058HEXFET POWER MOSFET IRF5Y1310CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y1310CM 100V 0.044 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

9.4. Size:106K international rectifier
irf5y5305cm.pdf

PD - 94028HEXFET POWER MOSFET IRF5Y5305CMTHRU-HOLE (TO-257AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y5305CM -55V 0.065 -18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures

9.5. Size:97K international rectifier
irf5y31n20.pdf

PD - 94349AHEXFET POWER MOSFET IRF5Y31N20THRU-HOLE (TO-257AA)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y31N20 200V 0.092 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

9.6. Size:103K international rectifier
irf5y3710cm.pdf

PD - 94178HEXFET POWER MOSFET IRF5Y3710CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3710CM 100V 0.035 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

9.7. Size:104K international rectifier
irf5yz48cm.pdf

PD - 94019AHEXFET POWER MOSFET IRF5YZ48CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 0.029 18A* IRF5YZ48CM 55VFifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

9.8. Size:104K international rectifier
irf5y3315cm.pdf

PD - 94268HEXFET POWER MOSFET IRF5Y3315CMTHRU-HOLE (TO-257AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y3315CM 150V 0.085 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:

9.9. Size:97K international rectifier
irf5y540cm.pdf

PD - 94017BHEXFET POWER MOSFET IRF5Y540CMTHRU-HOLE (TO-257AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5Y540CM 100V 0.058 18A*Fifth Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

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