IRF620B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF620B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 47 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 45 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de IRF620B MOSFET
- Selecciónⓘ de transistores por parámetros
IRF620B datasheet
8.2. Size:162K international rectifier
irf620spbf.pdf 
IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio
8.3. Size:886K international rectifier
irf620.pdf
PD - 94870 IRF620PbF Lead-Free 12/5/03 Document Number 91027 www.vishay.com 1 IRF620PbF Document Number 91027 www.vishay.com 2 IRF620PbF Document Number 91027 www.vishay.com 3 IRF620PbF Document Number 91027 www.vishay.com 4 IRF620PbF Document Number 91027 www.vishay.com 5 IRF620PbF Document Number 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline
8.4. Size:247K international rectifier
irf6201pbf.pdf
PD - 97500A IRF6201PbF HEXFET Power MOSFET VDS 20 V RDS(on) max 2.45 m (@VGS = 4.5V) RDS(on) max 2.75 m (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25 C) Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low RDSon ( 2.45m @ Vgs = 4.5V) Lower
8.5. Size:202K international rectifier
irf620pbf.pdf
IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
8.6. Size:184K st
irf620.pdf
IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V
8.8. Size:931K samsung
irf620a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
8.9. Size:152K vishay
irf620 sihf620.pdf
IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
Otros transistores... IRF6100PBF, IRF610L, IRF610LPBF, IRF610PBF, IRF610SPBF, IRF614PBF, IRF614SPBF, IRF6201PBF, IRF640, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, FQP6P25, FQP70N08
