IRF6215LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF6215LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-262

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IRF6215LPBF Datasheet (PDF)

..1. Size:992K international rectifier
irf6215lpbf irf6215spbf.pdf

PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S

..2. Size:992K infineon
irf6215spbf irf6215lpbf.pdf

7.1. Size:182K international rectifier
irf6215s.pdf

PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

7.2. Size:820K international rectifier
auirf6215s.pdf

AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpec

7.3. Size:177K international rectifier
irf6215pbf.pdf

PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

7.4. Size:125K international rectifier
irf6215.pdf

PD - 91479BIRF6215HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.29 P-ChannelG Fully Avalanche RatedID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

7.5. Size:270K infineon
auirf6215.pdf

PD - 97564AUTOMOTIVE GRADEAUIRF6215Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel P-Channel DV(BR)DSS-150Vl Dynamic dv/dt RatingRDS(on) max.0.29l 175C Operating TemperatureGl Fast SwitchingID-13ASl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive QualifiedDD

7.6. Size:2157K infineon
auirf6215s.pdf

AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo

7.7. Size:177K infineon
irf6215pbf.pdf

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