IRF6215PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF6215PBF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-220AB

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IRF6215PBF datasheet

 ..1. Size:177K  international rectifier
 irf6215pbf.pdf pdf_icon

IRF6215PBF

PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

 7.1. Size:182K  international rectifier
 irf6215s.pdf pdf_icon

IRF6215PBF

PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 7.2. Size:270K  international rectifier
 auirf6215.pdf pdf_icon

IRF6215PBF

PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D

 7.3. Size:820K  international rectifier
 auirf6215s.pdf pdf_icon

IRF6215PBF

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec

MOSTRAR MÁS

Otros transistores... IRF610SPBF, IRF614PBF, IRF614SPBF, IRF6201PBF, IRF620B, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF640N, IRF6215SPBF, FQP6N90, FQP6P25, FQP70N08, FQP7N10, FQP7N10L, FQP7N20, FQP7N20L