IRFZ15 Datasheet. Equivalente

 ..1. Size:42K  1
 irfz12 irfz15 irfz25 irfz35 irfz45.pdf

 9.1. Size:43K  international rectifier
 irfz1x irfz2x irfz3x irfz4x.pdf

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 9.2. Size:875K  international rectifier
 irfz14pbf.pdf

PD - 94959 IRFZ14PbF Lead-Free www.irf.com 1 01/29/04 IRFZ14PbF 2 www.irf.com IRFZ14PbF www.irf.com 3 IRFZ14PbF 4 www.irf.com IRFZ14PbF www.irf.com 5 IRFZ14PbF 6 www.irf.com IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -

 9.3. Size:234K  international rectifier
 irfz14s.pdf

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 9.4. Size:185K  international rectifier
 irfz14s-l.pdf

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

 9.5. Size:167K  international rectifier
 irfz14.pdf

 9.6. Size:373K  international rectifier
 irfz10.pdf

PD - 90440A IRFZ10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number 90363 www.vishay.com 1 IRFZ10 Document Number 90363 www.vishay.com 2 IRFZ10 Document Number 90363 www.vishay.com 3 IRFZ10 Document Number 90363 www.vishay.com 4 IRFZ10 Document Number 90363 www.vishay.com 5 IRFZ10 Document Number 90363 www.vishay.com 6 IRFZ10 Peak Diode Rec

 9.7. Size:435K  samsung
 irfz14a.pdf

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

 9.8. Size:333K  vishay
 irfz14s irfz14l sihfz14s sihfz14l.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw

 9.9. Size:324K  vishay
 irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Sw

 9.10. Size:1583K  vishay
 irfz14 sihfz14.pdf

IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching Qg (Max.) (nC) 11 COMPLIANT Ease of Paralleling Qgs (nC) 3.1 Qgd (nC) 5.8 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 9.11. Size:1167K  vishay
 irfz10 sihfz10.pdf

IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 11 Ease of Paralleling Qgs (nC) 3.1 Simple Drive Requirements Qgd (nC) 5.8 Compliant to RoHS Directive 2002/95/EC Configuration Single

 9.12. Size:376K  vishay
 irfz14s sihfz14s sihfz14l.pdf

IRFZ14S, SiHFZ14S, SiHFZ14L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S) I2PAK (TO-262) D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switching Available G Material categorization for definitions of compliance please see www.vishay.c

 9.13. Size:288K  vishay
 irfz10pbf sihfz10.pdf

IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.20 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 11 Ease of Paralleling Qgs (nC) 3.1 Simple Drive Requirements Qgd (nC) 5.8 Compliant to RoHS Directive 2002/95/EC Configuration Single