FQP7N10L Todos los transistores

 

FQP7N10L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP7N10L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de FQP7N10L MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQP7N10L Datasheet (PDF)

 ..1. Size:544K  fairchild semi
 fqp7n10l.pdf pdf_icon

FQP7N10L

December 2000TMQFETQFETQFETQFETFQP7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

 7.1. Size:536K  fairchild semi
 fqp7n10.pdf pdf_icon

FQP7N10L

December 2000TMQFETQFETQFETQFETFQP7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is espe

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N10L

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 9.2. Size:579K  fairchild semi
 fqp7n60.pdf pdf_icon

FQP7N10L

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp

MOSTRAR MÁS

Otros transistores... IRF620SPBF , IRF6215LPBF , IRF6215PBF , IRF6215SPBF , FQP6N90 , FQP6P25 , FQP70N08 , FQP7N10 , IRFB4110 , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 .

History: CJAE2002 | 2SK2371 | HGT025N10A | FQI2N90TU | RFG75N05E | BRCS200N04DSC | BRCS30P10IP

 

 
Back to Top

 


 
.