FQP7N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP7N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 142 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO-220

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FQP7N60 datasheet

 ..1. Size:579K  fairchild semi
 fqp7n60.pdf pdf_icon

FQP7N60

April 2000 TM QFET QFET QFET QFET FQP7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been esp

 8.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N60

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 8.2. Size:885K  fairchild semi
 fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf pdf_icon

FQP7N60

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.1. Size:536K  fairchild semi
 fqp7n10.pdf pdf_icon

FQP7N60

December 2000 TM QFET QFET QFET QFET FQP7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is espe

MOSTRAR MÁS

Otros transistores... FQP6N90, FQP6P25, FQP70N08, FQP7N10, FQP7N10L, FQP7N20, FQP7N20L, FQP7N40, 8205A, FQP7N65C, FQP7N80, FQP7P20, FQP90N10V2, FQP9N08, FQP9N08L, FQP9N15, FQP9N25C