FQP9N08 Todos los transistores

 

FQP9N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP9N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.9 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

FQP9N08 Datasheet (PDF)

 ..1. Size:535K  fairchild semi
 fqp9n08.pdf pdf_icon

FQP9N08

December 2000TMQFETQFETQFETQFETFQP9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology is especi

 0.1. Size:540K  fairchild semi
 fqp9n08l.pdf pdf_icon

FQP9N08

December 2000TMQFETQFETQFETQFETFQP9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology is

 9.1. Size:1341K  fairchild semi
 fqp9n50c.pdf pdf_icon

FQP9N08

April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim

 9.2. Size:757K  fairchild semi
 fqp9n15.pdf pdf_icon

FQP9N08

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been espe

MOSTRAR MÁS

Otros transistores... FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 , IRFP260 , FQP9N08L , FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 , FQPF10N60CF , FQPF10N60CT , FQPF10N60CYDTU .

 

 
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