FQPF10N60CT Todos los transistores

 

FQPF10N60CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF10N60CT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 166 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
   Paquete / Cubierta: TO-220F

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FQPF10N60CT Datasheet (PDF)

 ..1. Size:1020K  fairchild semi
fqpf10n60ct fqpf10n60cydtu.pdf

FQPF10N60CT FQPF10N60CT

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

 4.1. Size:933K  fairchild semi
fqp10n60cf fqpf10n60cf.pdf

FQPF10N60CT FQPF10N60CT

February 2007TMFRFETFQP10N60CF / FQPF10N60CF600V N-Channel MOSFETFeatures Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

 4.2. Size:1122K  fairchild semi
fqp10n60c fqpf10n60c.pdf

FQPF10N60CT FQPF10N60CT

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

 4.3. Size:1465K  onsemi
fqp10n60c fqpf10n60c.pdf

FQPF10N60CT FQPF10N60CT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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