FQPF13N10 Todos los transistores

 

FQPF13N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF13N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220F
 

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FQPF13N10 Datasheet (PDF)

 ..1. Size:617K  fairchild semi
fqpf13n10.pdf pdf_icon

FQPF13N10

January 2001TMQFETQFETQFETQFETFQPF13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has bee

 0.1. Size:552K  fairchild semi
fqpf13n10l.pdf pdf_icon

FQPF13N10

December 2000TMQFETQFETQFETQFETFQPF13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technolog

 7.1. Size:922K  fairchild semi
fqp13n50c fqpf13n50c.pdf pdf_icon

FQPF13N10

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 7.2. Size:1148K  fairchild semi
fqp13n50cf fqpf13n50cf.pdf pdf_icon

FQPF13N10

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

Otros transistores... FQPF12N60 , FQPF12N60CT , FQPF12N60T , FQPF12P10 , FQPF12P20 , FQPF12P20XDTU , FQPF12P20YDTU , FQPF13N06 , AON7506 , FQPF13N10L , FQPF13N50 , FQPF13N50CSDTU , FQPF13N50CT , FQPF13N50T , FQPF14N15 , FQPF14N30 , FQPF16N25 .

History: DMN2004WK | 2SK753 | SUN830D | WMP15N60C4 | STU4N80K5 | PTP20N70A | NTZD3155CT1G

 

 
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