FQPF13N50T Todos los transistores

 

FQPF13N50T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF13N50T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de FQPF13N50T MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQPF13N50T Datasheet (PDF)

 ..1. Size:880K  fairchild semi
fqpf13n50 fqpf13n50t.pdf pdf_icon

FQPF13N50T

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 5.1. Size:922K  fairchild semi
fqp13n50c fqpf13n50c.pdf pdf_icon

FQPF13N50T

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 5.2. Size:1148K  fairchild semi
fqp13n50cf fqpf13n50cf.pdf pdf_icon

FQPF13N50T

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

 5.3. Size:1062K  fairchild semi
fqp13n50c fqpf13n50c.pdf pdf_icon

FQPF13N50T

November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia

Otros transistores... FQPF12P20XDTU , FQPF12P20YDTU , FQPF13N06 , FQPF13N10 , FQPF13N10L , FQPF13N50 , FQPF13N50CSDTU , FQPF13N50CT , IRFP250 , FQPF14N15 , FQPF14N30 , FQPF16N25 , FQPF17N08 , FQPF17N08L , FQPF17N40T , FQPF17P06 , FQPF17P10 .

History: PT9926 | STP17NK40ZFP | ME2606

 

 
Back to Top

 


 
.