FQPF17N40T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF17N40T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 185 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: TO-220F

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FQPF17N40T datasheet

 ..1. Size:723K  fairchild semi
 fqpf17n40t.pdf pdf_icon

FQPF17N40T

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 5.1. Size:728K  fairchild semi
 fqpf17n40.pdf pdf_icon

FQPF17N40T

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 5.2. Size:1044K  onsemi
 fqpf17n40.pdf pdf_icon

FQPF17N40T

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:600K  fairchild semi
 fqpf17n08.pdf pdf_icon

FQPF17N40T

January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has bee

MOSTRAR MÁS

Otros transistores... FQPF13N50CSDTU, FQPF13N50CT, FQPF13N50T, FQPF14N15, FQPF14N30, FQPF16N25, FQPF17N08, FQPF17N08L, 4N60, FQPF17P06, FQPF17P10, FQPF18N20V2, FQPF18N50V2, FQPF19N10L, FQPF19N20CYDTU, FQPF19N20T, FQPF1N50