FQPF18N50V2 Todos los transistores

 

FQPF18N50V2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF18N50V2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.265 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET FQPF18N50V2

 

FQPF18N50V2 Datasheet (PDF)

 ..1. Size:1208K  1
fqp18n50v2 fqpf18n50v2.pdf

FQPF18N50V2
FQPF18N50V2

QFETFQP18N50V2/FQPF18N50V2 500V N-Channel MOSFETFeatures Description 550V @TJ = 150C These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 VDMOS technology. Low gate charge (typical 42 nC)This advanced technology has been especially tailored to mini- Lo

 ..2. Size:844K  fairchild semi
fqpf18n50v2.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP18N50V2/FQPF18N50V2500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailor

 7.1. Size:793K  fairchild semi
fqp18n20v2 fqpf18n20v2.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP18N20V2/FQPF18N20V2200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailore

 9.1. Size:469K  1
fqp12n65c fqpf12n65c.pdf

FQPF18N50V2
FQPF18N50V2

12N65 SeriesN-Channel MOSFET12A, 650V, N H FQP12N65C H12N65P P: TO-220AB12N65 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF12N65C H12N65F F: TO-220FP12N65 Series Pin AssignmentFeaturesID=12AOriginative New Des

 9.2. Size:933K  fairchild semi
fqp10n60cf fqpf10n60cf.pdf

FQPF18N50V2
FQPF18N50V2

February 2007TMFRFETFQP10N60CF / FQPF10N60CF600V N-Channel MOSFETFeatures Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

 9.3. Size:552K  fairchild semi
fqpf13n10l.pdf

FQPF18N50V2
FQPF18N50V2

December 2000TMQFETQFETQFETQFETFQPF13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technolog

 9.4. Size:709K  fairchild semi
fqpf14n30.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 8.5A, 300V, RDS(on) = 0.29 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been

 9.5. Size:686K  fairchild semi
fqpf19n20t.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 9.6. Size:723K  fairchild semi
fqpf17n40t.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 9.7. Size:562K  fairchild semi
fqpf1p50.pdf

FQPF18N50V2
FQPF18N50V2

December 2000TMQFETQFETQFETQFETFQPF1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.03A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is

 9.8. Size:643K  fairchild semi
fqpf11p06.pdf

FQPF18N50V2
FQPF18N50V2

QFETFQPF11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.6A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

 9.9. Size:922K  fairchild semi
fqp13n50c fqpf13n50c.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 9.10. Size:549K  fairchild semi
fqpf12n60.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

 9.11. Size:1168K  fairchild semi
fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf

FQPF18N50V2
FQPF18N50V2

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

 9.12. Size:1213K  fairchild semi
fqpf11n40ct.pdf

FQPF18N50V2
FQPF18N50V2

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 9.13. Size:1148K  fairchild semi
fqp13n50cf fqpf13n50cf.pdf

FQPF18N50V2
FQPF18N50V2

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

 9.14. Size:581K  fairchild semi
fqpf19n10.pdf

FQPF18N50V2
FQPF18N50V2

August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been

 9.15. Size:852K  fairchild semi
fqp15p12 fqpf15p12.pdf

FQPF18N50V2
FQPF18N50V2

QFETFQP15P12/FQPF15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailored

 9.16. Size:669K  fairchild semi
fqpf13n06l.pdf

FQPF18N50V2
FQPF18N50V2

May 2001TMQFETFQPF13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tail

 9.17. Size:1062K  fairchild semi
fqp13n50c fqpf13n50c.pdf

FQPF18N50V2
FQPF18N50V2

November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia

 9.18. Size:1162K  fairchild semi
fqp16n25c fqpf16n25c.pdf

FQPF18N50V2
FQPF18N50V2

QFETFQP16N25C/FQPF16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailore

 9.19. Size:987K  fairchild semi
fqp10n50cf fqpf10n50cf.pdf

FQPF18N50V2
FQPF18N50V2

December 2006 TM FRFETFQP10N50CF / FQPF10N50CF 500V N-Channel MOSFETFeatures Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 16pF)This advanced technology has been espe

 9.20. Size:1291K  fairchild semi
fqp11n50cf fqp11n50cf fqpf11n50cf.pdf

FQPF18N50V2
FQPF18N50V2

July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

 9.21. Size:1020K  fairchild semi
fqpf10n60ct fqpf10n60cydtu.pdf

FQPF18N50V2
FQPF18N50V2

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

 9.22. Size:1216K  fairchild semi
fqp11n40c fqpf11n40c.pdf

FQPF18N50V2
FQPF18N50V2

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

 9.23. Size:600K  fairchild semi
fqpf17n08.pdf

FQPF18N50V2
FQPF18N50V2

January 2001TMQFETQFETQFETQFETFQPF17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has bee

 9.24. Size:629K  fairchild semi
fqpf12p20ydtu fqpf12p20 fqpf12p20xdtu.pdf

FQPF18N50V2
FQPF18N50V2

May 2000TMQFETQFETQFETQFETFQPF12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

 9.25. Size:880K  fairchild semi
fqpf13n50 fqpf13n50t.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 9.26. Size:658K  fairchild semi
fqpf13n06.pdf

FQPF18N50V2
FQPF18N50V2

May 2001TMQFETFQPF13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.4A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially tailored

 9.27. Size:664K  fairchild semi
fqpf17p10.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQPF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -10.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 9.28. Size:709K  fairchild semi
fqpf11n40t.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

 9.29. Size:751K  fairchild semi
fqpf14n15.pdf

FQPF18N50V2
FQPF18N50V2

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 150V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been e

 9.30. Size:629K  fairchild semi
fqpf12p10.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQPF12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to

 9.31. Size:728K  fairchild semi
fqpf17n40.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 9.32. Size:555K  fairchild semi
fqpf17n08l.pdf

FQPF18N50V2
FQPF18N50V2

December 2000TMQFETQFETQFETQFETFQPF17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced technology

 9.33. Size:540K  fairchild semi
fqpf1n60 fqpf1n60t.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFETFQPF1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

 9.34. Size:875K  fairchild semi
fqp10n20c fqpf10n20c.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailor

 9.35. Size:1122K  fairchild semi
fqp10n60c fqpf10n60c.pdf

FQPF18N50V2
FQPF18N50V2

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

 9.36. Size:722K  fairchild semi
fqpf16n15.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.6A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 9.37. Size:732K  fairchild semi
fqpf16n25.pdf

FQPF18N50V2
FQPF18N50V2

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been e

 9.38. Size:674K  fairchild semi
fqpf17p06.pdf

FQPF18N50V2
FQPF18N50V2

May 2001TMQFETFQPF17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored

 9.39. Size:691K  fairchild semi
fqpf19n20.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 9.40. Size:883K  fairchild semi
fqp13n50 fqpf13n50.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 9.41. Size:1123K  fairchild semi
fqpf12n60c.pdf

FQPF18N50V2
FQPF18N50V2

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 9.42. Size:891K  fairchild semi
fqpf13n50csdtu fqpf13n50ct.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 9.43. Size:803K  fairchild semi
fqpf12n60ct.pdf

FQPF18N50V2
FQPF18N50V2

September 2006 QFETFQPF12N60CT600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21 pF)This advanced technology has been especially tailored

 9.44. Size:1170K  fairchild semi
fqp12n60c fqpf12n60c.pdf

FQPF18N50V2
FQPF18N50V2

September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall

 9.45. Size:722K  fairchild semi
fqpf1n50.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has bee

 9.46. Size:764K  fairchild semi
fqpf10n20.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has be

 9.47. Size:616K  fairchild semi
fqpf19n10l.pdf

FQPF18N50V2
FQPF18N50V2

August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h

 9.48. Size:547K  fairchild semi
fqpf12n60 fqpf12n60t.pdf

FQPF18N50V2
FQPF18N50V2

April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

 9.49. Size:617K  fairchild semi
fqpf13n10.pdf

FQPF18N50V2
FQPF18N50V2

January 2001TMQFETQFETQFETQFETFQPF13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has bee

 9.50. Size:1251K  onsemi
fqpf10n50cf.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.51. Size:839K  onsemi
fqpf11p06.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.52. Size:1172K  onsemi
fqp13n50c fqpf13n50c.pdf

FQPF18N50V2
FQPF18N50V2

FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using ON Semiconductors ID = 6.5 Aproprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC)advanced technology has been especially tail

 9.53. Size:951K  onsemi
fqp15p12 fqpf15p12.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.54. Size:789K  onsemi
fqp19n20c fqpf19n20c.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.55. Size:1044K  onsemi
fqpf17n40.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.56. Size:821K  onsemi
fqp10n20c fqpf10n20c.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.57. Size:1465K  onsemi
fqp10n60c fqpf10n60c.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.58. Size:618K  onsemi
fqpf13n50cf.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.59. Size:882K  onsemi
fqp13n50 fqpf13n50.pdf

FQPF18N50V2
FQPF18N50V2

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 9.60. Size:1123K  onsemi
fqpf12n60c.pdf

FQPF18N50V2
FQPF18N50V2

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 9.61. Size:521K  onsemi
fqpf16n25c.pdf

FQPF18N50V2
FQPF18N50V2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.62. Size:201K  inchange semiconductor
fqpf10n20c.pdf

FQPF18N50V2
FQPF18N50V2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQPF10N20CFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gat

 9.63. Size:201K  inchange semiconductor
fqpf13n50c.pdf

FQPF18N50V2
FQPF18N50V2

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FQPF13N50CFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

 9.64. Size:278K  inchange semiconductor
fqpf13n50cf.pdf

FQPF18N50V2
FQPF18N50V2

isc N-Channel MOSFET Transistor FQPF13N50CFFEATURESDrain Current : I =13A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.54m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 9.65. Size:224K  inchange semiconductor
fqpf12n60c.pdf

FQPF18N50V2
FQPF18N50V2

isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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