FQPF1N60T Todos los transistores

 ..1. Size:540K  fairchild semi
 fqpf1n60 fqpf1n60t.pdf

April 2000 TM QFET QFET QFET QFET FQPF1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been

 8.1. Size:722K  fairchild semi
 fqpf1n50.pdf

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.9A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has bee

 9.1. Size:1208K  1
 fqp18n50v2 fqpf18n50v2.pdf

QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Lo

 9.2. Size:469K  1
 fqp12n65c fqpf12n65c.pdf

12N65 Series N-Channel MOSFET 12A, 650V, N H FQP12N65C H12N65P P TO-220AB 12N65 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF12N65C H12N65F F TO-220FP 12N65 Series Pin Assignment Features ID=12A Originative New Des

 9.3. Size:933K  fairchild semi
 fqp10n60cf fqpf10n60cf.pdf

February 2007 TM FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia

 9.4. Size:552K  fairchild semi
 fqpf13n10l.pdf

December 2000 TM QFET QFET QFET QFET FQPF13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technolog

 9.5. Size:709K  fairchild semi
 fqpf14n30.pdf

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 8.5A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been

 9.6. Size:686K  fairchild semi
 fqpf19n20t.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be

 9.7. Size:723K  fairchild semi
 fqpf17n40t.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 9.8. Size:562K  fairchild semi
 fqpf1p50.pdf

December 2000 TM QFET QFET QFET QFET FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.03A, -500V, RDS(on) = 10.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is

 9.9. Size:643K  fairchild semi
 fqpf11p06.pdf

QFET FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.6A, -60V, RDS(on) = 0.175 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to

 9.10. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t

 9.11. Size:549K  fairchild semi
 fqpf12n60.pdf

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been

 9.12. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf

QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo

 9.13. Size:1213K  fairchild semi
 fqpf11n40ct.pdf

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 9.14. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially t

 9.15. Size:581K  fairchild semi
 fqpf19n10.pdf

August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been

 9.16. Size:852K  fairchild semi
 fqp15p12 fqpf15p12.pdf

QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 110 pF) This advanced technology has been especially tailored

 9.17. Size:669K  fairchild semi
 fqpf13n06l.pdf

May 2001 TM QFET FQPF13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tail

 9.18. Size:1062K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especia

 9.19. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore

 9.20. Size:987K  fairchild semi
 fqp10n50cf fqpf10n50cf.pdf

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 16pF) This advanced technology has been espe

 9.21. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai

 9.22. Size:1020K  fairchild semi
 fqpf10n60ct fqpf10n60cydtu.pdf

April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especiall

 9.23. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 9.24. Size:600K  fairchild semi
 fqpf17n08.pdf

January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has bee

 9.25. Size:629K  fairchild semi
 fqpf12p20ydtu fqpf12p20 fqpf12p20xdtu.pdf

May 2000 TM QFET QFET QFET QFET FQPF12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

 9.26. Size:880K  fairchild semi
 fqpf13n50 fqpf13n50t.pdf

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 9.27. Size:658K  fairchild semi
 fqpf13n06.pdf

May 2001 TM QFET FQPF13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.4A, 60V, RDS(on) = 0.135 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailored

 9.28. Size:664K  fairchild semi
 fqpf17p10.pdf

 9.29. Size:709K  fairchild semi
 fqpf11n40t.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been

 9.30. Size:751K  fairchild semi
 fqpf14n15.pdf

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.8A, 150V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been e

 9.31. Size:629K  fairchild semi
 fqpf12p10.pdf

TM QFET FQPF12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.2A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

 9.32. Size:728K  fairchild semi
 fqpf17n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 9.33. Size:555K  fairchild semi
 fqpf17n08l.pdf

December 2000 TM QFET QFET QFET QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced technology

 9.34. Size:875K  fairchild semi
 fqp10n20c fqpf10n20c.pdf

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor

 9.35. Size:1122K  fairchild semi
 fqp10n60c fqpf10n60c.pdf

April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especiall

 9.36. Size:722K  fairchild semi
 fqpf16n15.pdf

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.6A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 9.37. Size:844K  fairchild semi
 fqpf18n50v2.pdf

TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor

 9.38. Size:732K  fairchild semi
 fqpf16n25.pdf

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been e

 9.39. Size:793K  fairchild semi
 fqp18n20v2 fqpf18n20v2.pdf

TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailore

 9.40. Size:674K  fairchild semi
 fqpf17p06.pdf

May 2001 TM QFET FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored

 9.41. Size:691K  fairchild semi
 fqpf19n20.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be

 9.42. Size:883K  fairchild semi
 fqp13n50 fqpf13n50.pdf

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 9.43. Size:1123K  fairchild semi
 fqpf12n60c.pdf

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored

 9.44. Size:891K  fairchild semi
 fqpf13n50csdtu fqpf13n50ct.pdf

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t

 9.45. Size:803K  fairchild semi
 fqpf12n60ct.pdf

September 2006 QFET FQPF12N60CT 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21 pF) This advanced technology has been especially tailored

 9.46. Size:1170K  fairchild semi
 fqp12n60c fqpf12n60c.pdf

September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especiall

 9.47. Size:764K  fairchild semi
 fqpf10n20.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.8A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has be

 9.48. Size:616K  fairchild semi
 fqpf19n10l.pdf

August 2000 TM QFET QFET QFET QFET FQPF19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology h

 9.49. Size:547K  fairchild semi
 fqpf12n60 fqpf12n60t.pdf

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been

 9.50. Size:617K  fairchild semi
 fqpf13n10.pdf

January 2001 TM QFET QFET QFET QFET FQPF13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.7A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee

 9.51. Size:1251K  onsemi
 fqpf10n50cf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.52. Size:839K  onsemi
 fqpf11p06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.53. Size:1172K  onsemi
 fqp13n50c fqpf13n50c.pdf

FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using ON Semiconductor s ID = 6.5 A proprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC) advanced technology has been especially tail

 9.54. Size:951K  onsemi
 fqp15p12 fqpf15p12.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.55. Size:789K  onsemi
 fqp19n20c fqpf19n20c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.56. Size:1044K  onsemi
 fqpf17n40.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.57. Size:821K  onsemi
 fqp10n20c fqpf10n20c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.58. Size:1465K  onsemi
 fqp10n60c fqpf10n60c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.59. Size:618K  onsemi
 fqpf13n50cf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.60. Size:882K  onsemi
 fqp13n50 fqpf13n50.pdf

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 9.61. Size:1123K  onsemi
 fqpf12n60c.pdf

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored

 9.62. Size:521K  onsemi
 fqpf16n25c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.63. Size:201K  inchange semiconductor
 fqpf10n20c.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQPF10N20C FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gat

 9.64. Size:201K  inchange semiconductor
 fqpf13n50c.pdf

 9.65. Size:278K  inchange semiconductor
 fqpf13n50cf.pdf

isc N-Channel MOSFET Transistor FQPF13N50CF FEATURES Drain Current I =13A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =0.54m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.66. Size:224K  inchange semiconductor
 fqpf12n60c.pdf

isc N-Channel Mosfet Transistor FQPF12N60C FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. A