FQPF2N90 Todos los transistores

 

FQPF2N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF2N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
   Paquete / Cubierta: TO-220F
 

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FQPF2N90 Datasheet (PDF)

 ..1. Size:726K  fairchild semi
fqpf2n90.pdf pdf_icon

FQPF2N90

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has be

 8.1. Size:732K  fairchild semi
fqpf2n30.pdf pdf_icon

FQPF2N90

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

 8.2. Size:1366K  fairchild semi
fqp2n60c fqpf2n60c.pdf pdf_icon

FQPF2N90

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

 8.3. Size:561K  fairchild semi
fqpf2n60.pdf pdf_icon

FQPF2N90

April 2000TMQFETQFETQFETQFETFQPF2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

Otros transistores... FQPF1P50 , FQPF27N25T , FQPF28N15 , FQPF28N15T , FQPF2N30 , FQPF2N40 , FQPF2N50 , FQPF2N60 , RU6888R , FQPF2NA90 , FQPF2P25 , FQPF2P40 , FQPF30N06 , FQPF32N12V2 , FQPF34N20 , FQPF34N20L , FQPF3N30 .

History: CHM4311JGP | CSD17575Q3 | IXZ316N60 | HFP8N65S | AM35N03-40D | HAT2199WP | QM4004S

 

 
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