FQPF3N50C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF3N50C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

  📄📄 Copiar 

 Búsqueda de reemplazo de FQPF3N50C MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQPF3N50C datasheet

 ..1. Size:1269K  fairchild semi
 fqp3n50c fqpf3n50c.pdf pdf_icon

FQPF3N50C

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

 ..2. Size:1267K  fairchild semi
 fqp3n50c fqpf3n50c.pdf pdf_icon

FQPF3N50C

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

 8.1. Size:710K  fairchild semi
 fqpf3n40.pdf pdf_icon

FQPF3N50C

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has bee

 8.2. Size:810K  fairchild semi
 fqp3n80c fqpf3n80c.pdf pdf_icon

FQPF3N50C

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t

MOSTRAR MÁS

Otros transistores... FQPF2P25, FQPF2P40, FQPF30N06, FQPF32N12V2, FQPF34N20, FQPF34N20L, FQPF3N30, FQPF3N40, 8N65, FQPF3N60, FQPF3N80, FQPF3N80CYDTU, FQPF3N90, FQPF3P20, FQPF3P50, FQPF44N08, FQPF44N08T