FQPF3N50C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF3N50C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO-220F
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FQPF3N50C Datasheet (PDF)
fqp3n50c fqpf3n50c.pdf

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to
fqp3n50c fqpf3n50c.pdf

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to
fqpf3n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has bee
fqp3n80c fqpf3n80c.pdf

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t
Otros transistores... FQPF2P25 , FQPF2P40 , FQPF30N06 , FQPF32N12V2 , FQPF34N20 , FQPF34N20L , FQPF3N30 , FQPF3N40 , 8N60 , FQPF3N60 , FQPF3N80 , FQPF3N80CYDTU , FQPF3N90 , FQPF3P20 , FQPF3P50 , FQPF44N08 , FQPF44N08T .
History: FQPF11N40CT | FQD7P20TM | KP901B | FQPF2P25 | 4N65G-TQ2-T | KRF7507 | HM100N15
History: FQPF11N40CT | FQD7P20TM | KP901B | FQPF2P25 | 4N65G-TQ2-T | KRF7507 | HM100N15



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