IRFZ24NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ24NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 45 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 17 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 13.3 nC
Resistencia drenaje-fuente RDS(on): 0.07 Ohm
Empaquetado / Estuche: D2PAK
Búsqueda de reemplazo de MOSFET IRFZ24NS
IRFZ24NS Datasheet (PDF)
1.1. irfz24nspbf.pdf 
Size:672K _update
PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
1.2. irfz24ns.pdf Size:159K _international_rectifier
PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res
3.1. irfz24npbf.pdf Size:242K _update
IRFZ24NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating l 175°C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) Ω G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res
3.2. irfz24n 1.pdf Size:53K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re
3.3. irfz24n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re
3.4. irfz24n.pdf Size:123K _international_rectifier
PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area
Otros transistores... IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , IRFZ24N , IRFZ24NL , 40673 , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , IRFZ34N , IRFZ34NL .
