FQPF44N08T Todos los transistores

 

FQPF44N08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF44N08T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 41 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 38 nC

Tiempo de elevación (tr): 170 nS

Conductancia de drenaje-sustrato (Cd): 400 pF

Resistencia drenaje-fuente RDS(on): 0.034 Ohm

Empaquetado / Estuche: TO-220F

Búsqueda de reemplazo de MOSFET FQPF44N08T

 

FQPF44N08T Datasheet (PDF)

1.1. fqpf44n08 fqpf44n08t.pdf Size:668K _fairchild_semi

FQPF44N08T
FQPF44N08T

August 2000 TM QFET QFET QFET QFET FQPF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 25A, 80V, RDS(on) = 0.034Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been e

3.1. fqpf44n10.pdf Size:568K _fairchild_semi

FQPF44N08T
FQPF44N08T

December 2000 TM QFET QFET QFET QFET FQPF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 27A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology is esp

 5.1. fqpf47p06.pdf Size:703K _fairchild_semi

FQPF44N08T
FQPF44N08T

May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored to Fast

5.2. fqp45n15v2 fqpf45n15v2.pdf Size:954K _fairchild_semi

FQPF44N08T
FQPF44N08T

QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailored to Fast

 5.3. fqpf4n50.pdf Size:718K _fairchild_semi

FQPF44N08T
FQPF44N08T

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.4. fqpf4n90.pdf Size:622K _fairchild_semi

FQPF44N08T
FQPF44N08T

October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially

 5.5. fqpf4p40.pdf Size:636K _fairchild_semi

FQPF44N08T
FQPF44N08T

August 2000 TM QFET QFET QFET QFET FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.4A, -400V, RDS(on) = 3.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has bee

5.6. fqpf4n60.pdf Size:549K _fairchild_semi

FQPF44N08T
FQPF44N08T

April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been e

5.7. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQPF44N08T
FQPF44N08T

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

5.8. fqpf4n25.pdf Size:739K _fairchild_semi

FQPF44N08T
FQPF44N08T

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been

5.9. fqpf4n20.pdf Size:715K _fairchild_semi

FQPF44N08T
FQPF44N08T

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

5.10. fqpf47p06ydtu.pdf Size:701K _fairchild_semi

FQPF44N08T
FQPF44N08T

May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -30A, -60V, RDS(on) = 0.026Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especially tailore

5.11. fqpf4n80.pdf Size:638K _fairchild_semi

FQPF44N08T
FQPF44N08T

September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.6 pF) This advanced technology has been especially tail

5.12. fqpf46n15.pdf Size:747K _fairchild_semi

FQPF44N08T
FQPF44N08T

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.6A, 150V, RDS(on) = 0.042Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has b

5.13. fqpf4n20l.pdf Size:541K _fairchild_semi

FQPF44N08T
FQPF44N08T

December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technolog

Otros transistores... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
Back to Top

 


FQPF44N08T
  FQPF44N08T
  FQPF44N08T
  FQPF44N08T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top