IRFZ25 Todos los transistores

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PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per sili... See More ⇒

PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 60m Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn... See More ⇒

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-s... See More ⇒

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PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 60m G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ach... See More ⇒

IRFZ24NPbF l Advanced Process Technology D l Dynamic dv/dt Rating l 175 C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res... See More ⇒

PD - 95147 IRFZ24NS/LPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175 C Operating Temperature RDS(on) = 0.07 Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-s... See More ⇒

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Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings... See More ⇒

IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Extremely Low RDS(on) VDS (V) 50 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 17 Low Drive Current Qgs (nC) 9.0 Ease of Paralleling Qgd (nC) 3.0 Excellent Temperature Stability Configuration Single Parts Per Million Quality Compliant to R... See More ⇒

IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.10 Fast Switching Qg (Max.) (nC) 25 Ease of Paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio... See More ⇒

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating Temperature Qgs (nC) 5.8 Fast Sw... See More ⇒

IRFZ24, SiHFZ24 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 60 175 C operating temperature RDS(on) ( )VGS = 10 V 0.10 Fast switching Qg max. (nC) 25 Ease of paralleling Qgs (nC) 5.8 Qgd (nC) 11 Simple drive requirements Configuration Single Material categorization for definitions of compliance ... See More ⇒

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IRFZ24NS www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire... See More ⇒

IRFZ24N 60V N-Channel Power MOSFET DESCRIPTION The IRFZ24N uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID = 30A Schematic diagram RDS(ON) ... See More ⇒

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NLPbF FEATURES With TO-262(DPAK) packaging Surface mount High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NSPbF FEATURES With TO-263(D2PAK) packaging Surface mount High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒