FQPF4N60 Todos los transistores

 

FQPF4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF4N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 36 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 15 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 2.2 Ohm

Empaquetado / Estuche: TO-220F

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FQPF4N60 Datasheet (PDF)

1.1. fqpf4n60.pdf Size:549K _fairchild_semi

FQPF4N60
FQPF4N60

April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been e

4.1. fqpf4n50.pdf Size:718K _fairchild_semi

FQPF4N60
FQPF4N60

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

4.2. fqpf4n90.pdf Size:622K _fairchild_semi

FQPF4N60
FQPF4N60

October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially

 4.3. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQPF4N60
FQPF4N60

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

4.4. fqpf4n25.pdf Size:739K _fairchild_semi

FQPF4N60
FQPF4N60

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been

 4.5. fqpf4n20.pdf Size:715K _fairchild_semi

FQPF4N60
FQPF4N60

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

4.6. fqpf4n80.pdf Size:638K _fairchild_semi

FQPF4N60
FQPF4N60

September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.6 pF) This advanced technology has been especially tail

4.7. fqpf4n20l.pdf Size:541K _fairchild_semi

FQPF4N60
FQPF4N60

December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technolog

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