FQPF50N06L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF50N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 47 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 32.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 380 nS
Cossⓘ - Capacitancia de salida: 445 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de FQPF50N06L MOSFET
- Selecciónⓘ de transistores por parámetros
FQPF50N06L datasheet
..1. Size:670K fairchild semi
fqpf50n06l.pdf 
May 2001 TM QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32.6A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially
5.1. Size:628K fairchild semi
fqpf50n06.pdf
May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to
5.2. Size:202K inchange semiconductor
fqpf50n06.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQPF50N06 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIM
9.1. Size:858K fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t
9.2. Size:659K fairchild semi
fqpf5p10.pdf
TM QFET FQPF5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.9A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to
9.3. Size:556K fairchild semi
fqpf5n20l.pdf
December 2000 TM QFET QFET QFET QFET FQPF5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology
9.4. Size:758K fairchild semi
fqpf5n30.pdf
May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been e
9.6. Size:508K fairchild semi
fqpf5p20rdtu.pdf
August 2014 FQPF5P20 P-Channel QFET MOSFET -200 V, -3.4 A, 1.4 Description Features This P-Channel enhancement mode power MOSFET is -3.4 A, -200 V, RDS(on) = 1.4 (Max.) @ VGS = -10 V, produced using Fairchild Semiconductor s proprietary ID = -1.7 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tai
9.7. Size:610K fairchild semi
fqpf5p20.pdf
May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -3.4A, -200V, RDS(on) = 1.4 @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 nC) minim
9.8. Size:728K fairchild semi
fqpf5n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been
9.9. Size:743K fairchild semi
fqpf5n15.pdf
May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.2A, 150V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been e
9.10. Size:1159K fairchild semi
fqpf5n60c.pdf
December 2013 FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC) technology has been
9.11. Size:710K fairchild semi
fqpf5n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been
9.12. Size:657K fairchild semi
fqpf5n50cf fqpf5n50cftu.pdf
TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- F
9.13. Size:624K fairchild semi
fqpf5n60.pdf
TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to Fas
9.14. Size:665K fairchild semi
fqpf5n90.pdf
September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has b
9.15. Size:750K fairchild semi
fqpf5n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been
9.16. Size:652K fairchild semi
fqpf55n10.pdf
August 2000 TM QFET QFET QFET QFET FQPF55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 34.2A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has b
9.17. Size:650K fairchild semi
fqpf5n80.pdf
September 2000 TM QFET FQPF5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 25 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailo
9.18. Size:979K onsemi
fqp5n50c fqpf5n50c.pdf
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9.19. Size:839K onsemi
fqp5n60c fqpf5n60c.pdf
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t
Otros transistores... FQPF4N20L, FQPF4N25, FQPF4N50, FQPF4N60, FQPF4N80, FQPF4N90, FQPF4P40, FQPF50N06, IRFZ44, FQPF55N10, FQPF5N15, FQPF5N20, FQPF5N20L, FQPF5N30, FQPF5N50, FQPF5N50CFTU, FQPF5N50CT
