IRFZ30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ30 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 550 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: TO220
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IRFZ30 datasheet
9.3. Size:263K international rectifier
auirfz34n.pdf 
PD - 97621 AUTOMOTIVE GRADE AUIRFZ34N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.040 G l Fast Switching l Fully Avalanche Rated S ID 29A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description
9.4. Size:296K international rectifier
irfz34nspbf irfz34nlpbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
9.5. Size:109K international rectifier
irfz34n.pdf
PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
9.7. Size:296K international rectifier
irfz34nlpbf irfz34nspbf.pdf
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.040 l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
9.8. Size:120K international rectifier
irfz34e.pdf
PD - 9.1672A IRFZ34E HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.042 Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc
9.9. Size:128K international rectifier
irfz34vs irfz34vl.pdf
PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techn
9.10. Size:302K international rectifier
irfz34s irfz34l.pdf
PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175 C Operating Temperature RDS(on) = 0.050 Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
9.11. Size:179K international rectifier
irfz34npbf.pdf
PD - 94807 IRFZ34NPbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o
9.12. Size:1901K international rectifier
irfz34epbf.pdf
PD - 94789 IRFZ34EPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Ease of Paralleling RDS(on) = 0.042 l Lead-Free G Description ID = 28A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest p
9.13. Size:161K international rectifier
irfz34ns.pdf
PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature RDS(on) = 0.040 Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
9.14. Size:193K international rectifier
irfz34s irfz34l 1.pdf
PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175 C Operating Temperature RDS(on) = 0.050 Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
9.15. Size:2027K international rectifier
irfz34pbf.pdf
PD - 94944 IRFZ34PbF Lead-Free 01/14/04 Document Number 91290 www.vishay.com 1 IRFZ34PbF Document Number 91290 www.vishay.com 2 IRFZ34PbF Document Number 91290 www.vishay.com 3 IRFZ34PbF Document Number 91290 www.vishay.com 4 IRFZ34PbF Document Number 91290 www.vishay.com 5 IRFZ34PbF Document Number 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline
9.16. Size:104K international rectifier
irfz34v.pdf
PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ach
9.17. Size:500K samsung
irfz34a.pdf
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings
9.18. Size:1556K vishay
irfz34 sihfz34.pdf
IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.050 RoHS* Fast Switching Qg (Max.) (nC) 46 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.19. Size:375K vishay
irfz34l irfz34s sihfz34l sihfz34s.pdf
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.050 Surface Mount Qg (Max.) (nC) 46 Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) 175 C Operating Temperature Qgs (nC) 11 Fast Switching Qgd (nC) 22
9.20. Size:1559K vishay
irfz34pbf sihfz34.pdf
IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.050 RoHS* Fast Switching Qg (Max.) (nC) 46 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.21. Size:2679K cn vbsemi
irfz34np.pdf
IRFZ34NP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
9.22. Size:1177K cn vbsemi
irfz34nstr.pdf
IRFZ34NSTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
9.23. Size:258K inchange semiconductor
irfz34ns.pdf
isc N-Channel MOSFET Transistor IRFZ34NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Otros transistores... IRFZ20, IRFZ22, IRFZ24, IRFZ24A, IRFZ24N, IRFZ24NL, IRFZ24NS, IRFZ25, IRF1405, IRFZ32, IRFZ34, IRFZ34A, IRFZ34E, IRFZ34N, IRFZ34NL, IRFZ34NS, IRFZ35
