IRFZ30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 90 W
Tensión drenaje-fuente (Vds): 50 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 30 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 30 nC
Resistencia drenaje-fuente RDS(on): 0.05 Ohm
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de MOSFET IRFZ30
IRFZ30 Datasheet (PDF)
1.1. irfz30pbf.pdf 
Size:425K _update
5.1. irfz34epbf.pdf Size:1901K _update
PD - 94789 IRFZ34EPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 60V l Fast Switching l Ease of Paralleling RDS(on) = 0.042Ω l Lead-Free G Description ID = 28A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest p
5.2. irfz34npbf.pdf Size:179K _update
PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o
5.3. irfz34l irfz34s.pdf Size:375K _update
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.050 • Surface Mount Qg (Max.) (nC) 46 • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature Qgs (nC) 11 • Fast Switching Qgd (nC) 22
5.4. irfz34pbf.pdf Size:1559K _update
IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (Ω)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D
5.5. irfz34nlpbf irfz34nspbf.pdf Size:296K _update
PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.040Ω l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech
5.6. irfz34n.pdf Size:104K _international_rectifier
PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.040? Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per si
5.7. irfz34vs.pdf Size:128K _international_rectifier
PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to
5.8. irfz34v.pdf Size:104K _international_rectifier
PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
5.9. irfz34.pdf Size:171K _international_rectifier
5.10. irfz34e.pdf Size:120K _international_rectifier
PD - 9.1672A IRFZ34E HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.042? Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s
5.11. irfz34s-l.pdf Size:193K _international_rectifier
PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T
5.12. irfz34pbf.pdf Size:2027K _international_rectifier
PD - 94944 IRFZ34PbF Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline Dime
5.13. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier
Powered by ICminer.com Electronic-Library Service CopyRight 2003
5.14. irfz34ns.pdf Size:161K _international_rectifier
PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040? Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re
5.15. irfz34s.pdf Size:302K _international_rectifier
PD - 9.892A IRFZ34S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T
5.16. irfz34a.pdf Size:500K _samsung
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol
5.17. irfz34 sihfz34.pdf Size:1556K _vishay
IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.050 RoHS* Fast Switching Qg (Max.) (nC) 46 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |