FQPF55N10 Todos los transistores

 

FQPF55N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF55N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 34.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 75 nC

Tiempo de elevación (tr): 250 nS

Conductancia de drenaje-sustrato (Cd): 640 pF

Resistencia drenaje-fuente RDS(on): 0.026 Ohm

Empaquetado / Estuche: TO-220F

Búsqueda de reemplazo de MOSFET FQPF55N10

 

FQPF55N10 Datasheet (PDF)

1.1. fqpf55n10.pdf Size:652K _fairchild_semi

FQPF55N10
FQPF55N10

August 2000 TM QFET QFET QFET QFET FQPF55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 34.2A, 100V, RDS(on) = 0.026Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 130 pF) This advanced technology has b

5.1. fqpf5n50cftu.pdf Size:657K _fairchild_semi

FQPF55N10
FQPF55N10

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • F

5.2. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

 5.3. fqpf5p10.pdf Size:659K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQPF5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.9A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to •

5.4. fqpf5n15.pdf Size:743K _fairchild_semi

FQPF55N10
FQPF55N10

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 150V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been e

 5.5. fqpf5n60cydtu.pdf Size:858K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

5.6. fqpf5p20.pdf Size:610K _fairchild_semi

FQPF55N10
FQPF55N10

May 2000 TM QFET QFET QFET QFET FQPF5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. -3.4A, -200V, RDS(on) = 1.4? @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 nC) minimize on-stat

5.7. fqpf5n30.pdf Size:758K _fairchild_semi

FQPF55N10
FQPF55N10

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.9A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been e

5.8. fqpf50n06.pdf Size:628K _fairchild_semi

FQPF55N10
FQPF55N10

May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 60V, RDS(on) = 0.022Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to

5.9. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast swi

5.10. fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf Size:879K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

5.11. fqpf5n50cf.pdf Size:657K _fairchild_semi

FQPF55N10
FQPF55N10

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast switching m

5.12. fqpf5n60c.pdf Size:1159K _fairchild_semi

FQPF55N10
FQPF55N10

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

5.13. fqpf5n20.pdf Size:710K _fairchild_semi

FQPF55N10
FQPF55N10

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.14. fqpf5n90.pdf Size:665K _fairchild_semi

FQPF55N10
FQPF55N10

September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall

5.15. fqpf5p20rdtu.pdf Size:508K _fairchild_semi

FQPF55N10
FQPF55N10

August 2014 FQPF5P20 P-Channel QFET® MOSFET -200 V, -3.4 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is • -3.4 A, -200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = -10 V, produced using Fairchild Semiconductor’s proprietary ID = -1.7 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tai

5.16. fqpf50n06l.pdf Size:670K _fairchild_semi

FQPF55N10
FQPF55N10

May 2001 TM QFET FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 32.6A, 60V, RDS(on) = 0.021Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been especially

5.17. fqpf5n40.pdf Size:728K _fairchild_semi

FQPF55N10
FQPF55N10

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially t

5.18. fqpf5n20l.pdf Size:556K _fairchild_semi

FQPF55N10
FQPF55N10

December 2000 TM QFET QFET QFET QFET FQPF5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

5.19. fqpf5n60.pdf Size:624K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fas

5.20. fqpf5n50.pdf Size:750K _fairchild_semi

FQPF55N10
FQPF55N10

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been

5.21. fqpf5n80.pdf Size:650K _fairchild_semi

FQPF55N10
FQPF55N10

September 2000 TM QFET FQPF5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailo

5.22. fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF55N10
FQPF55N10

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

Otros transistores... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
Back to Top

 


FQPF55N10
  FQPF55N10
  FQPF55N10
  FQPF55N10
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top