FQPF5N60CYDTU Todos los transistores

 

FQPF5N60CYDTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF5N60CYDTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220F
 

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FQPF5N60CYDTU Datasheet (PDF)

 ..1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N60CYDTU

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 5.1. Size:1159K  fairchild semi
 fqpf5n60c.pdf pdf_icon

FQPF5N60CYDTU

December 2013FQP5N60C / FQPF5N60CN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC)technology has been

 5.2. Size:839K  onsemi
 fqp5n60c fqpf5n60c.pdf pdf_icon

FQPF5N60CYDTU

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 6.1. Size:624K  fairchild semi
 fqpf5n60.pdf pdf_icon

FQPF5N60CYDTU

TMQFETFQPF5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especially tailored to Fas

MOSTRAR MÁS

Otros transistores... FQPF5N20L , FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , FQPF5N60 , IRFP250N , FQPF5N80 , FQPF5P10 , FQPF6N15 , FQPF6N25 , FQPF6N40C , FQPF6N40CF , FQPF6N40CT , FQPF6N50 .

History: AP65SL190AWL | 2SK4067I

 

 
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