FQPF5N60CYDTU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF5N60CYDTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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FQPF5N60CYDTU datasheet

 ..1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N60CYDTU

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 5.1. Size:1159K  fairchild semi
 fqpf5n60c.pdf pdf_icon

FQPF5N60CYDTU

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC) technology has been

 5.2. Size:839K  onsemi
 fqp5n60c fqpf5n60c.pdf pdf_icon

FQPF5N60CYDTU

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 6.1. Size:624K  fairchild semi
 fqpf5n60.pdf pdf_icon

FQPF5N60CYDTU

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to Fas

MOSTRAR MÁS

Otros transistores... FQPF5N20L, FQPF5N30, FQPF5N50, FQPF5N50CFTU, FQPF5N50CT, FQPF5N50CTTU, FQPF5N50CYDTU, FQPF5N60, IRFB4115, FQPF5N80, FQPF5P10, FQPF6N15, FQPF6N25, FQPF6N40C, FQPF6N40CF, FQPF6N40CT, FQPF6N50