IRFZ34 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ34
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46(max) nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO220

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IRFZ34 Datasheet (PDF)

..1. Size:171K international rectifier
irfz34.pdf pdf_icon

..2. Size:2027K international rectifier
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PD - 94944IRFZ34PbF Lead-Free01/14/04Document Number: 91290 www.vishay.com1IRFZ34PbFDocument Number: 91290 www.vishay.com2IRFZ34PbFDocument Number: 91290 www.vishay.com3IRFZ34PbFDocument Number: 91290 www.vishay.com4IRFZ34PbFDocument Number: 91290 www.vishay.com5IRFZ34PbFDocument Number: 91290 www.vishay.com6IRFZ34PbFTO-220AB Package Outline

..3. Size:1556K vishay
irfz34 sihfz34.pdf pdf_icon

IRFZ34, SiHFZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.050RoHS* Fast SwitchingQg (Max.) (nC) 46COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

..4. Size:1559K vishay
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0.1. Size:263K international rectifier
auirfz34n.pdf pdf_icon

PD - 97621AUTOMOTIVE GRADEAUIRFZ34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.040Gl Fast Switchingl Fully Avalanche RatedS ID29Al Repetitive Avalanche Allowed upto Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescription

0.2. Size:296K international rectifier
irfz34nspbf irfz34nlpbf.pdf pdf_icon

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

0.3. Size:109K international rectifier
irfz34n.pdf pdf_icon

PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance

0.4. Size:296K international rectifier
irfz34nlpbf irfz34nspbf.pdf pdf_icon

0.5. Size:120K international rectifier
irfz34e.pdf pdf_icon

PD - 9.1672AIRFZ34EHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Ease of ParallelingID = 28ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistanc

0.6. Size:128K international rectifier
irfz34vs irfz34vl.pdf pdf_icon

PD - 94180IRFZ34VSIRFZ34VL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 60V 175C Operating Temperature Fast Switching Fully Avalanche RatedRDS(on) = 28mG Optimized for SMPS ApplicationsDescriptionID = 30AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techn

0.7. Size:302K international rectifier
irfz34s irfz34l.pdf pdf_icon

PD - 9.892AIRFZ34S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175C Operating Temperature RDS(on) = 0.050 Fast SwitchingGID = 30ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

0.8. Size:179K international rectifier
irfz34npbf.pdf pdf_icon

PD - 94807IRFZ34NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible o

0.9. Size:1901K international rectifier
irfz34epbf.pdf pdf_icon

PD - 94789IRFZ34EPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Ease of ParallelingRDS(on) = 0.042l Lead-FreeGDescriptionID = 28AFifth Generation HEXFETs from International RectifierSutilize advanced processing techniques to achieve thelowest p

0.10. Size:161K international rectifier
irfz34ns.pdf pdf_icon

PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

0.11. Size:193K international rectifier
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0.12. Size:104K international rectifier
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PD - 94042IRFZ34VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 28mG Fast Switching Fully Avalanche RatedID = 30A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ach

0.13. Size:500K samsung
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Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating TemperatureA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

0.14. Size:375K vishay
irfz34l irfz34s sihfz34l sihfz34s.pdf pdf_icon

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.050 Surface MountQg (Max.) (nC) 46 Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 22

0.15. Size:2679K cn vbsemi
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IRFZ34NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

0.16. Size:1177K cn vbsemi
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IRFZ34NSTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

0.17. Size:258K inchange semiconductor
irfz34ns.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFZ34NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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