FQPF6N60 Todos los transistores

 ..1. Size:542K  fairchild semi
 fqpf6n60.pdf

April 2000 TM QFET QFET QFET QFET FQPF6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been es

 0.1. Size:931K  fairchild semi
 fqp6n60c fqp6n60c fqpf6n60c fqpf6n60c.pdf

QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

 0.2. Size:1046K  onsemi
 fqp6n60c fqpf6n60c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.3. Size:921K  cn vbsemi
 fqpf6n60c.pdf

FQPF6N60C www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS