FQPF6N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF6N90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 40 nC
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET FQPF6N90
FQPF6N90 Datasheet (PDF)
fqpf6n90.pdf
QFET N-CHANNEL FQPF6N90FEATURESBVDSS = 900V Advanced New DesignRDS(ON) = 1.9 Avalanche Rugged TechnologyID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220F Unrivalled Gate Charge: 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 1.5 (Typ.) 1231. Gate 2. Drain 3. Sou
fqpf6n90ct.pdf
TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to
fqp6n90c fqpf6n90c.pdf
TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to
fqp6n90c fqpf6n90c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918