FQPF6N90 Todos los transistores

 

FQPF6N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF6N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 80 nS

Conductancia de drenaje-sustrato (Cd): 140 pF

Resistencia drenaje-fuente RDS(on): 1.9 Ohm

Empaquetado / Estuche: TO-220F

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FQPF6N90 Datasheet (PDF)

1.1. fqp6n90c fqpf6n90c.pdf Size:860K _fairchild_semi

FQPF6N90
FQPF6N90

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switch

1.2. fqpf6n90.pdf Size:600K _fairchild_semi

FQPF6N90
FQPF6N90

QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V • Advanced New Design RDS(ON) = 1.9Ω • Avalanche Rugged Technology ID = 3.4A • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics TO-220F • Unrivalled Gate Charge: 40nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 1.5Ω (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou

 1.3. fqpf6n90ct.pdf Size:858K _fairchild_semi

FQPF6N90
FQPF6N90

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 30 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

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