FQPF7N20L Todos los transistores

 

FQPF7N20L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF7N20L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 6.8 nC

Tiempo de elevación (tr): 125 nS

Conductancia de drenaje-sustrato (Cd): 55 pF

Resistencia drenaje-fuente RDS(on): 0.75 Ohm

Empaquetado / Estuche: TO-220F

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FQPF7N20L Datasheet (PDF)

1.1. fqpf7n20l.pdf Size:548K _fairchild_semi

FQPF7N20L
FQPF7N20L

December 2000 TM QFET QFET QFET QFET FQPF7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technolog

2.1. fqpf7n20.pdf Size:683K _fairchild_semi

FQPF7N20L
FQPF7N20L

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.8A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has bee

 4.1. fqpf7n40.pdf Size:782K _fairchild_semi

FQPF7N20L
FQPF7N20L

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.6A, 400V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has bee

4.2. fqpf7n60.pdf Size:604K _fairchild_semi

FQPF7N20L
FQPF7N20L

April 2000 TM QFET QFET QFET QFET FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tail

 4.3. fqpf7n10l.pdf Size:554K _fairchild_semi

FQPF7N20L
FQPF7N20L

December 2000 TM QFET QFET QFET QFET FQPF7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology

4.4. fqpf7n10.pdf Size:550K _fairchild_semi

FQPF7N20L
FQPF7N20L

December 2000 TM QFET QFET QFET QFET FQPF7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is esp

 4.5. fqp7n65c fqpf7n65c.pdf Size:886K _fairchild_semi

FQPF7N20L
FQPF7N20L

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switchi

4.6. fqp7n80c fqpf7n80c.pdf Size:848K _fairchild_semi

FQPF7N20L
FQPF7N20L

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast swit

4.7. fqpf7n80.pdf Size:787K _fairchild_semi

FQPF7N20L
FQPF7N20L

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 800V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 19 pF) This advanced technology has been e

4.8. fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf Size:885K _fairchild_semi

FQPF7N20L
FQPF7N20L

® QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

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