FQPF7N20L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF7N20L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 125 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO-220F

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FQPF7N20L datasheet

 ..1. Size:548K  fairchild semi
 fqpf7n20l.pdf pdf_icon

FQPF7N20L

December 2000 TM QFET QFET QFET QFET FQPF7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technolog

 6.1. Size:683K  fairchild semi
 fqpf7n20.pdf pdf_icon

FQPF7N20L

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.8A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has bee

 8.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQPF7N20L

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 8.2. Size:550K  fairchild semi
 fqpf7n10.pdf pdf_icon

FQPF7N20L

December 2000 TM QFET QFET QFET QFET FQPF7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is esp

MOSTRAR MÁS

Otros transistores... FQPF6N70, FQPF6N80, FQPF6N90, FQPF6N90CT, FQPF6P25, FQPF7N10, FQPF7N10L, FQPF7N20, IRFP260, FQPF7N40, FQPF7N65CF105, FQPF7N65CYDTU, FQPF7N80, FQPF7P06, FQPF8N60CT, FQPF8N60CYDTU, FQPF8N80CYDTU