FQPF9N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF9N30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET FQPF9N30
FQPF9N30 Datasheet (PDF)
fqpf9n30.pdf
May 2000TMQFETQFETQFETQFETFQPF9N30300V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.0A, 300V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp
fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been
fqpf9n15.pdf
May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.9A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been esp
fqp9n25c fqpf9n25c.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
fqpf9n50ct fqpf9n50cydtu.pdf
TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
fqpf9n90ct.pdf
TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to
fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
fqpf9n50cf.pdf
December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to
fqpf9n08l.pdf
December 2000TMQFETQFETQFETQFETFQPF9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology i
fqp9n50c fqpf9n50c.pdf
TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
fqp9n90c fqpf9n90c.pdf
TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to
fqpf9n08.pdf
December 2000TMQFETQFETQFETQFETFQPF9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology is espec
fqpf9n50c.pdf
November 2013FQPF9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to m
fqpf9n25c fqpf9n25ct.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp9n25c fqpf9n25c.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
fqpf9n50cf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp9n90c fqpf9n90c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqpf9n90c.pdf
isc N-Channel MOSFET Transistor FQPF9N90CDESCRIPTIONRDS(on) = 1.4 @VGS = 10 V, ID = 4 AFast Switching Speed100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918