FQT1N80TFWS Todos los transistores

 

FQT1N80TFWS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQT1N80TFWS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm
   Paquete / Cubierta: SOT-223
 

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FQT1N80TFWS Datasheet (PDF)

 5.1. Size:807K  fairchild semi
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FQT1N80TFWS

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

 5.2. Size:1060K  onsemi
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FQT1N80TFWS

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 7.1. Size:807K  fairchild semi
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FQT1N80TFWS

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

Otros transistores... FQPF9N50T , FQPF9N50YDTU , FQPF9N90CT , FQPF9P25YDTU , FQS4410TF , FQT13N06LTF , FQT13N06TF , FQT1N60CTFWS , 75N75 , FQT2P25TF , FQT3P20TF , FQT4N20LTF , FQT4N20TF , FQT4N25TF , FQT5P10TF , FQT7N10LTF , FQT7N10TF .

History: FQU11P06TU | 2SK2766-01R | BUK7K12-60E | GSM1563 | FQU2N80 | GSM1026S | IRFP260MPBF

 

 
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