FQT1N80TFWS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT1N80TFWS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm

Encapsulados: SOT-223

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FQT1N80TFWS datasheet

 5.1. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N80TFWS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 5.2. Size:1060K  onsemi
 fqt1n80tf-ws.pdf pdf_icon

FQT1N80TFWS

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 7.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N80TFWS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

MOSTRAR MÁS

Otros transistores... FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, 18N50, FQT2P25TF, FQT3P20TF, FQT4N20LTF, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF