FQU2N100TU Todos los transistores

 

FQU2N100TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU2N100TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
   Paquete / Cubierta: I-PAK
 

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FQU2N100TU Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf pdf_icon

FQU2N100TU

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

 9.1. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQU2N100TU

January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail

 9.2. Size:1291K  fairchild semi
 fqu2n90.pdf pdf_icon

FQU2N100TU

January 2014FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.85 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC)MOSFET technology has been especiall

 9.3. Size:731K  fairchild semi
 fqu2n50b.pdf pdf_icon

FQU2N100TU

November 2013FQU2N50BN-Channel QFET MOSFET500 V, 1.6 A, 5.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.6 A, 500 V, RDS(on) = 5.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.8 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 6.0 nC)MOSFET technology has been especially tailo

MOSTRAR MÁS

Otros transistores... FQU13N06TU , FQU13N10TU , FQU17P06TU , FQU1N50TU , FQU1N60CTU , FQU1N60TU , FQU1N80TU , FQU20N06TU , 2SK3918 , FQU2N50BTU , FQU2N60CTU , FQU2N60TU , FQU2N80 , FQU2N80TU , FQU2N90TU , FQU30N06LTU , FQU3N40TU .

History: BUK625R0-40C

 

 
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