FQU2N60CTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQU2N60CTU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 44 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 8.5 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 20 pF
Resistencia entre drenaje y fuente RDS(on): 4.7 Ohm
Paquete / Cubierta: I-PAK
Búsqueda de reemplazo de MOSFET FQU2N60CTU
FQU2N60CTU Datasheet (PDF)
fqd2n60c fqu2n60c fqu2n60ctu.pdf
January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail
fqd2n60c fqu2n60c.pdf
TMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.5 nC)planar stripe, DMOS technology. Low Crss ( typical 4.3 pF)This advanced technology has been especially tailored
fqd2n60tf fqd2n60tm fqu2n60tu.pdf
April 2000TMQFETQFETQFETQFETFQD2N60 / FQU2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology
fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf
January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t
fqu2n90.pdf
January 2014FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.85 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC)MOSFET technology has been especiall
fqu2n50b.pdf
November 2013FQU2N50BN-Channel QFET MOSFET500 V, 1.6 A, 5.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.6 A, 500 V, RDS(on) = 5.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.8 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 6.0 nC)MOSFET technology has been especially tailo
fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf
January 2009QFETFQD2N90 / FQU2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especi
fqd2n80tf fqd2n80tm fqd2n80 fqu2n80 fqu2n80 fqu2n80tu.pdf
January 2008QFETFQD2N80 / FQU2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially
fqu2n50btu.pdf
May 2000TMQFETQFETQFETQFETFQD2N50B / FQU2N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology
fqd2n90 fqu2n90.pdf
FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Features 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,ID = 0.85 ADescription Low Gate Charge (Typ. 12 nC)This N-Channel enhancement mode power MOSFET is Low Crss (Typ. 5.5 pF)produced using ON Semiconductors proprietary 100% Avalanche Testedplanar stripe and DMOS technology. This advanced
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