FQU2N80 Todos los transistores

 

FQU2N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU2N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.3 Ohm
   Paquete / Cubierta: I-PAK
 

 Búsqueda de reemplazo de FQU2N80 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQU2N80 Datasheet (PDF)

 ..1. Size:724K  fairchild semi
 fqd2n80tf fqd2n80tm fqd2n80 fqu2n80 fqu2n80 fqu2n80tu.pdf pdf_icon

FQU2N80

January 2008QFETFQD2N80 / FQU2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially

 9.1. Size:731K  fairchild semi
 fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf pdf_icon

FQU2N80

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

 9.2. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQU2N80

January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail

 9.3. Size:1291K  fairchild semi
 fqu2n90.pdf pdf_icon

FQU2N80

January 2014FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.85 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC)MOSFET technology has been especiall

MOSTRAR MÁS

Otros transistores... FQU1N60CTU , FQU1N60TU , FQU1N80TU , FQU20N06TU , FQU2N100TU , FQU2N50BTU , FQU2N60CTU , FQU2N60TU , AO3407 , FQU2N80TU , FQU2N90TU , FQU30N06LTU , FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU .

History: AOLF66413 | P06P03LVG | BSB017N03LX3G | DH8004 | SPB80N10LG

 

 
Back to Top

 


 
.