FQU2N80TU Todos los transistores

 

FQU2N80TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU2N80TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 12 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 45 pF

Resistencia drenaje-fuente RDS(on): 6.3 Ohm

Empaquetado / Estuche: I-PAK

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FQU2N80TU Datasheet (PDF)

1.1. fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

3.1. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to

 5.1. fqu2n100tu.pdf Size:731K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET® FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially t

5.2. fqu2n50b.pdf Size:731K _fairchild_semi

FQU2N80TU
FQU2N80TU

November 2013 FQU2N50B N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo

 5.3. fqu2n60tu.pdf Size:560K _fairchild_semi

FQU2N80TU
FQU2N80TU

April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

5.4. fqu2n90tu.pdf Size:841K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

 5.5. fqu2n90.pdf Size:1291K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2014 FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.85 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 12 nC) MOSFET technology has been especiall

5.6. fqd2n100 fqu2n100.pdf Size:731K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

5.7. fqu2n60ctu.pdf Size:762K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 8.5 nC) DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tail

5.8. fqd2n90 fqu2n90.pdf Size:841K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored

5.9. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi

FQU2N80TU
FQU2N80TU

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-

5.10. fqu2n50btu.pdf Size:598K _fairchild_semi

FQU2N80TU
FQU2N80TU

May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology

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