FQU3N60 Todos los transistores

 

FQU3N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU3N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
   Paquete / Cubierta: I-PAK
 

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FQU3N60 Datasheet (PDF)

 ..1. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQU3N60

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 ..2. Size:573K  fairchild semi
 fqd3n60tm fqu3n60 fqu3n60tu.pdf pdf_icon

FQU3N60

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 0.1. Size:773K  fairchild semi
 fqu3n60ctu.pdf pdf_icon

FQU3N60

August 2006 QFETFQD3N60C / FQU3N60C600V N-Channel MOSFETFeatures Description 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10.5nC)DMOS technology. Low Crss ( typical 5pF)This advanced technology has been especially t

 9.1. Size:705K  fairchild semi
 fqu3n40tu.pdf pdf_icon

FQU3N60

April 2000TMQFETQFETQFETQFETFQD3N40 / FQU3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

MOSTRAR MÁS

Otros transistores... FQU2N50BTU , FQU2N60CTU , FQU2N60TU , FQU2N80 , FQU2N80TU , FQU2N90TU , FQU30N06LTU , FQU3N40TU , IRFZ44N , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU , FQU5N40TU , FQU5N50CTU .

History: MPGP06R030H | IRF7342TR | BLS65R041F-W

 

 
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