FQU5N40TU Todos los transistores

 

FQU5N40TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU5N40TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: I-PAK
 

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FQU5N40TU Datasheet (PDF)

 ..1. Size:730K  fairchild semi
 fqd5n40tf fqd5n40tm fqu5n40tu.pdf pdf_icon

FQU5N40TU

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

 7.1. Size:735K  fairchild semi
 fqu5n40 fqd5n40.pdf pdf_icon

FQU5N40TU

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

 9.1. Size:695K  fairchild semi
 fqd5n20 fqu5n20.pdf pdf_icon

FQU5N40TU

April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.2. Size:618K  fairchild semi
 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf pdf_icon

FQU5N40TU

October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especia

MOSTRAR MÁS

Otros transistores... FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU , 50N06 , FQU5N50CTU , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU .

 

 
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