IRF640LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF640LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 130 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 51 nS
Cossⓘ - Capacitancia de salida: 430 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO-262
Búsqueda de reemplazo de IRF640LPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRF640LPBF datasheet
..1. Size:196K vishay
irf640lpbf irf640spbf sihf640l sihf640s.pdf 
IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.18 Low-Profile Through-Hole Qg (Max.) (nC) 70 Available in Tape and Reel Qgs (nC) 13 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 39 Fast Swi
8.2. Size:109K motorola
irf640.rev1.pdf
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com
8.3. Size:155K international rectifier
irf640n.pdf
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15 Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processi
8.4. Size:2211K international rectifier
irf640pbf.pdf
PD - 94930 IRF640PbF Lead-Free 1/8/04 Document Number 91036 www.vishay.com 1 IRF640PbF Document Number 91036 www.vishay.com 2 IRF640PbF Document Number 91036 www.vishay.com 3 IRF640PbF Document Number 91036 www.vishay.com 4 IRF640PbF Document Number 91036 www.vishay.com 5 IRF640PbF Document Number 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline D
8.5. Size:336K international rectifier
irf640nlpbf irf640npbf irf640nspbf.pdf
PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif
8.6. Size:336K international rectifier
irf640npbf irf640nspbf irf640nlpbf.pdf
PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectif
8.7. Size:228K international rectifier
irf640s.pdf
PD -90902B IRF640S/L HEXFET Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18 150 C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best co
8.9. Size:935K international rectifier
irf640s-l.pdf
PD - 95113 IRF640S/LPbF Lead-Free 3/16/04 Document Number 91037 www.vishay.com 1 IRF640S/LPbF Document Number 91037 www.vishay.com 2 IRF640S/LPbF Document Number 91037 www.vishay.com 3 IRF640S/LPbF Document Number 91037 www.vishay.com 4 IRF640S/LPbF Document Number 91037 www.vishay.com 5 IRF640S/LPbF Document Number 91037 www.vishay.com 6 IRF640S/LPbF Docum
8.10. Size:97K philips
irf640 s 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technolog
8.11. Size:332K st
irf640 irf640fp.pdf
IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V
8.12. Size:107K st
irf640f fp.pdf
IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V
8.13. Size:330K st
irf640fp.pdf
IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V
8.14. Size:57K st
irf640.pdf
IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V
8.16. Size:128K fairchild semi
irf640 rf1s640 rf1s640sm.pdf
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd
8.17. Size:942K samsung
irf640a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
8.18. Size:197K vishay
irf640pbf sihf640.pdf
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC
8.20. Size:196K vishay
irf640 sihf640.pdf
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC
8.21. Size:51K harris semi
irf640 irf641 irf642 irf643 rf1s640.pdf
IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22 MOSFETs designed, tested, and guar
8.22. Size:976K wietron
irf640.pdf
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)
8.23. Size:760K blue-rocket-elect
irf640.pdf
IRF640 Rev.G Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi
8.24. Size:596K nell
irf640h.pdf
RoHS IRF640 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. D D They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia
8.25. Size:872K slkor
irf640.pdf
IRF640 N-Channel MOSFET Transistor FEATURES Static drain-source on-resistance TO-220 RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )
8.26. Size:723K cn evvo
irf640n.pdf
IRF640N N-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excel
8.27. Size:2053K cn vbsemi
irf640p.pdf
IRF640P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-Chan
8.28. Size:617K cn minos
irf640ns.pdf
Silicon N-Channel Power MOSFET Description IRF640NS, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Schematic diagram V =200V,I =18A
8.29. Size:245K inchange semiconductor
irf640n.pdf
isc N-Channel MOSFET Transistor IRF640N IIRF640N FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T
8.30. Size:228K inchange semiconductor
irf640ns.pdf
Isc N-Channel MOSFET Transistor IRF640NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.31. Size:183K inchange semiconductor
irf640.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.18 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc
8.32. Size:244K inchange semiconductor
irf640nl.pdf
Isc N-Channel MOSFET Transistor IRF640NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
Otros transistores... IRF630PBF, IRF630SPBF, IRF634NLPBF, IRF634NSPBF, IRF634PBF, IRF634SPBF, IRF640FP, IRF640H, SKD502T, IRF640NLPBF, IRF640NPBF, IRF640NSPBF, IRF640PBF, IRF640SPBF, IRF644N, IRF644NLPBF, IRF644NPBF
