IRF640NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF640NSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 185 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: TO-263
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IRF640NSPBF Datasheet (PDF)
irf640nlpbf irf640npbf irf640nspbf.pdf
PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
irf640npbf irf640nspbf irf640nlpbf.pdf
PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
irf640ns.pdf
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irf640n.pdf
PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi
irf640n.pdf
IRF640NN-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trenchN-ch MOSFETs with extreme high cell density,which provide excel
irf640n.pdf
isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
irf640nl.pdf
Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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