IRF644NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF644NLPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 54 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET IRF644NLPBF

IRF644NLPBF Datasheet (PDF)

..1. Size:124K vishay
irf644npbf irf644ns irf644nspbf irf644n irf644nlpbf.pdf

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 VAvailable Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.240RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 54 Fast SwitchingQgs (nC) 9.2 Fully Avalanche Rated Ease of ParallelingQgd

7.1. Size:291K international rectifier
irf644n.pdf

PD - 94859IRF644NPbFIRF644NSl Advanced Process TechnologyIRF644NLl Dynamic dv/dt Ratingl 175C Operating Temperature HEXFET Power MOSFETl Fast SwitchingDl Fully Avalanche RatedVDSS = 250Vl Ease of Parallelingl Simple Drive Requirementsl Lead-Free (only the TO-220ABRDS(on) = 240mversion is currently available in aGlead-free configuration)Description ID =

8.1. Size:219K international rectifier
irf644s.pdf

8.2. Size:2262K international rectifier
irf644spbf.pdf

PD - 95116IRF644SPbF Lead-Free3/16/04Document Number: 91040 www.vishay.com1IRF644SPbFDocument Number: 91040 www.vishay.com2IRF644SPbFDocument Number: 91040 www.vishay.com3IRF644SPbFDocument Number: 91040 www.vishay.com4IRF644SPbFDocument Number: 91040 www.vishay.com5IRF644SPbFDocument Number: 91040 www.vishay.com6IRF644SPbFD2Pak Package Outli

8.3. Size:919K international rectifier
irf644.pdf

PD - 94871IRF644PbF Lead-Free12/5/03Document Number: 91039 www.vishay.com1IRF644PbFDocument Number: 91039 www.vishay.com2IRF644PbFDocument Number: 91039 www.vishay.com3IRF644PbFDocument Number: 91039 www.vishay.com4IRF644PbFDocument Number: 91039 www.vishay.com5IRF644PbFDocument Number: 91039 www.vishay.com6IRF644PbFTO-220AB Package Outline

8.4. Size:506K international rectifier
irf644 irf645.pdf

8.5. Size:900K fairchild semi
irf644b irfs644b.pdf

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

8.6. Size:644K fairchild semi
irf644b.pdf

December 2013IRF644BN-Channel BFET MOSFET250 V, 14 A, 280 mDescription FeaturesThese N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (Typ. 47 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF)been especially tailored to mi

8.7. Size:935K samsung
irf644a.pdf

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

8.8. Size:202K vishay
irf644 sihf644.pdf

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

8.9. Size:167K vishay
irf644s sihf644s.pdf

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

8.10. Size:202K vishay
irf644pbf sihf644.pdf