IRF7103PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7103PbF-1HEXFET Power MOSFETVDS 50 V1 8S1 D1RDS(on) max 0.13 2 7G1 D1(@V = 10V)GS3 6S2 D2RDS(on) max 0.20 4 5(@V = 4.5V) G2 D2GSQg (typical) 12 nCSO-8Top ViewID 3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturin

PD -95037BIRF7103PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 50V2 7G1 D1l Surface Mount3 6l Available in Tape & Reel S2 D2RDS(on) = 0.130l Dynamic dv/dt Rating 4 5G2 D2l Fast SwitchingID = 3.0ATop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedleadf

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

AUTOMOTIVE GRADEAUIRF7103QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFET1 8l Low On-Resistance S1 D1V(BR)DSS50V2 7l Dynamic dV/dT Rating G1 D13 6l 175C Operating TemperatureS2 D2RDS(on) max.130m4 5l Fast SwitchingG2 D2l Lead-Free, RoHS CompliantIDTop View 3.0Al Automotive Qualified*DescriptionSpecifically d

PD -96085AIRF7103IPbFHEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = 50V2 7l Dual N-Channel MOSFETG1 D1l Surface Mount3 6S2 D2RDS(on) = 0.130l Available in Tape & Reel4 5G2 D2l Dynamic dv/dt RatingID = 3.0Al Fast SwitchingTop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedlea

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

PD - 9.1095BIRF7103HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 50V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.130 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.0A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced p

AUTOMOTIVE GRADE AUIRF7103Q VDSS Features 1 8S1 D1 50V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D2130m4 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF7103TRwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe