IRF720SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95119IRF720SPbF Lead-Free3/17/04Document Number: 91044 www.vishay.com1IRF720SPbFDocument Number: 91044 www.vishay.com2IRF720SPbFDocument Number: 91044 www.vishay.com3IRF720SPbFDocument Number: 91044 www.vishay.com4IRF720SPbFDocument Number: 91044 www.vishay.com5IRF720SPbFDocument Number: 91044 www.vishay.com6IRF720SPbFD2Pak Package Outli

IRF720S, SiHF720SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt RatingQgs (nC) 3.3 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Sing

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

IRF7205PbF-1HEXFET Power MOSFETAVDS -30 V1 8S DRDS(on) max 2 70.07 S D(@V = -10V)GS3 6RDS(on) max S D0.13 (@V = -4.5V)GS45G DQg (typical) 27 nCSO-8ID Top View-4.6 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturi

IRF7205PbF l Adavanced Process Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MOSFET 2 7S Dl Surface Mountl Available in Tape & Reel 3 6S D l Dynamic dv/dt Rating45G Dl Fast Switching l Lead-FreeTop ViewDescription

PD - 94844IRF720PbF Lead-Free11/14/03Document Number: 91043 www.vishay.com1IRF720PbFDocument Number: 91043 www.vishay.com2IRF720PbFDocument Number: 91043 www.vishay.com3IRF720PbFDocument Number: 91043 www.vishay.com4IRF720PbFDocument Number: 91043 www.vishay.com5IRF720PbFDocument Number: 91043 www.vishay.com6IRF720PbFTO-220AB Package Outline

PD - 91100CPRELIMINARY IRF7201HEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Available in Tape & Reel45G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techn

PD - 95166IRF7207PbFHEXFET Power MOSFETl Generation 5 TechnologyA1 8S Dl P-Channel MosfetVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G Dl Fast SwitchingRDS(on) = 0.06l Lead-FreeTop ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechni

PD - 9.1104BIRF7205HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -30V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.070 Available in Tape & Reel4 5G D Dynamic dv/dt RatingID = -4.6A Fast SwitchingT op ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

PD- 95022IRF7201PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceAA1 8l N-Channel MOSFETS DVDSS = 30Vl Surface Mount2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating45l Fast Switching G DRDS(on) = 0.030l Lead-FreeTop ViewDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utiliz

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

PD - 91879AIRF7207HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel MosfetVDSS = -20V2 7 Surface MountS D Available in Tape & Reel3 6S D Dynamic dv/dt Rating4 5G D Fast SwitchingRDS(on) = 0.06Top ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extre

PD - 9.1103BIRF7204HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.060 Available in Tape & Reel45G D Dynamic dv/dt RatingID = -5.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

AUTOMOTIVE GRADE AUIRF7207Q FeaturesHEXFET Power MOSFET Advanced Process Technology ALow On-Resistance 1 8 VDSS -20V S D2 7Logic Level Gate Drive S D3 6P-Channel MOSFET S DRDS(on) max 0.06 4 5G DDynamic dV/dT Rating 150C Operating Temperature ID Top View-5.4A Fast Switching Fully Avalanche Rate

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720S, SiHF720S, IRF720L, SiHF720Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.8Available Repetitive avalanche ratedQg (Max.) (nC) 20 Fast switchingQgs (nC) 3.3 Ease of parallelingAvailable Simple drive requirementsQ

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTION

SMD Type MOSFETP-Channel MOSFETIRF7205 (KRF7205)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 Source 5 Drain Fast Switching6 Drain2 Source7 Drain3 Source8 Drain4 GateA1 8S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter

IRF7204TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

IRF7205TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop