IRF7233PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7233PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 540 nS
Cossⓘ - Capacitancia de salida: 2400 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de IRF7233PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7233PBF datasheet
..1. Size:161K international rectifier
irf7233pbf.pdf 
PD - 95939 IRF7233PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
7.1. Size:92K international rectifier
irf7233.pdf
PD- 91849D IRF7233 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit p
9.2. Size:273K international rectifier
irf7205pbf-1.pdf
IRF7205PbF-1 HEXFET Power MOSFET A VDS -30 V 1 8 S D RDS(on) max 2 7 0.07 S D (@V = -10V) GS 3 6 RDS(on) max S D 0.13 (@V = -4.5V) GS 4 5 G D Qg (typical) 27 nC SO-8 ID Top View -4.6 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturi
9.3. Size:183K international rectifier
irf7220gpbf.pdf
PD -96258 IRF7220GPbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -14V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D l Halogen-Free RDS(on) = 0.012 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resi
9.4. Size:178K international rectifier
irf7241.pdf
PD- 94087 IRF7241 HEXFET Power MOSFET ) ) ) ) Trench Technology VDSS RDS(on) max (m ) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achieve ex
9.5. Size:229K international rectifier
irf7240.pdf
PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6
9.6. Size:121K international rectifier
irf7240pbf.pdf
PD- 95253 IRF7240PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A l Surface Mount 0.025@VGS = -4.5V -8.4A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistan
9.7. Size:1163K international rectifier
irf720spbf.pdf
PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number 91044 www.vishay.com 1 IRF720SPbF Document Number 91044 www.vishay.com 2 IRF720SPbF Document Number 91044 www.vishay.com 3 IRF720SPbF Document Number 91044 www.vishay.com 4 IRF720SPbF Document Number 91044 www.vishay.com 5 IRF720SPbF Document Number 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outli
9.8. Size:170K international rectifier
irf7241pbf.pdf
PD - 95294 IRF7241PbF HEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-Free A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achie
9.9. Size:547K international rectifier
irf7210pbf.pdf
PD - 97040 IRF7210PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.007 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic
9.10. Size:277K international rectifier
irf7205pbf.pdf
IRF7205PbF l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET 2 7 S D l Surface Mount l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free Top View Description
9.11. Size:894K international rectifier
irf720.pdf
PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number 91043 www.vishay.com 1 IRF720PbF Document Number 91043 www.vishay.com 2 IRF720PbF Document Number 91043 www.vishay.com 3 IRF720PbF Document Number 91043 www.vishay.com 4 IRF720PbF Document Number 91043 www.vishay.com 5 IRF720PbF Document Number 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline
9.13. Size:182K international rectifier
irf7201.pdf
PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn
9.14. Size:155K international rectifier
irf7220pbf.pdf
PD - 95172 IRF7220PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -14V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.012 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic
9.15. Size:150K international rectifier
irf7207pbf.pdf
PD - 95166 IRF7207PbF HEXFET Power MOSFET l Generation 5 Technology A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching RDS(on) = 0.06 l Lead-Free Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni
9.16. Size:81K international rectifier
irf7220.pdf
PD- 91850C IRF7220 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -14V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.012 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefi
9.17. Size:166K international rectifier
irf7205.pdf
PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070 Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process
9.18. Size:173K international rectifier
irf7201pbf.pdf
PD- 95022 IRF7201PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A A 1 8 l N-Channel MOSFET S D VDSS = 30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 l Fast Switching G D RDS(on) = 0.030 l Lead-Free Top View Description Fifth Generation HEXFET power MOSFETs from International Rectifier utiliz
9.20. Size:78K international rectifier
irf7210.pdf
PD- 91844A IRF7210 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.007 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefi
9.21. Size:243K international rectifier
irf7204pbf.pdf
PD - 95165 IRF7204PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D RDS(on) = 0.060 l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free ID = -5.3A Top View Description Fourth Generation HEXFETs from International Rectifier util
9.22. Size:89K international rectifier
irf7207.pdf
PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06 Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre
9.23. Size:145K international rectifier
irf7204.pdf
PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060 Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced process
9.24. Size:396K international rectifier
auirf7207q.pdf
AUTOMOTIVE GRADE AUIRF7207Q Features HEXFET Power MOSFET Advanced Process Technology A Low On-Resistance 1 8 VDSS -20V S D 2 7 Logic Level Gate Drive S D 3 6 P-Channel MOSFET S D RDS(on) max 0.06 4 5 G D Dynamic dV/dT Rating 150 C Operating Temperature ID Top View -5.4A Fast Switching Fully Avalanche Rate
9.26. Size:926K samsung
irf720a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris
9.27. Size:201K vishay
irf720 sihf720.pdf
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.28. Size:199K vishay
irf720spbf sihf720s.pdf
IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt Rating Qgs (nC) 3.3 Repetitive Avalanche Rated Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Sing
9.29. Size:176K vishay
irf720lpbf sihf720l.pdf
IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.8 Available Repetitive avalanche rated Qg (Max.) (nC) 20 Fast switching Qgs (nC) 3.3 Ease of paralleling Available Simple drive requirements Q
9.30. Size:201K vishay
irf720pbf sihf720.pdf
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.31. Size:1602K infineon
irf720 sihf720.pdf
IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION
9.32. Size:1894K kexin
irf7205.pdf
SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V) 1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 Source 5 Drain Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter
9.33. Size:2255K cn vbsemi
irf7204tr.pdf
IRF7204TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical
9.34. Size:2086K cn vbsemi
irf7210tr.pdf
IRF7210TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S
9.35. Size:806K cn vbsemi
irf7205tr.pdf
IRF7205TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top
9.36. Size:818K cn vbsemi
irf7241tr.pdf
IRF7241TR www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1
9.37. Size:736K cn vbsemi
irf7240trpbf.pdf
IRF7240TRPBF www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD
Otros transistores... IRF7205PBF-1, IRF7207PBF, IRF720LPBF, IRF720PBF, IRF720SPBF, IRF7210PBF, IRF7220GPBF, IRF7220PBF, EMB04N03H, IRF7240PBF, IRF7241PBF, IRF7304PBF-1, IRF7304QPBF, IRF7306QPBF, IRF7307QPBF, IRF7309IPBF, IRF7309PBF-1
