IRF7241PBF Todos los transistores

 ..1. Size:170K  international rectifier
 irf7241pbf.pdf

PD - 95294 IRF7241PbF HEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-Free A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achie

 7.1. Size:178K  international rectifier
 irf7241.pdf

PD- 94087 IRF7241 HEXFET Power MOSFET ) ) ) ) Trench Technology VDSS RDS(on) max (m ) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achieve ex

 7.2. Size:818K  cn vbsemi
 irf7241tr.pdf

IRF7241TR www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD 1

 8.1. Size:229K  international rectifier
 irf7240.pdf

PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6

 8.2. Size:121K  international rectifier
 irf7240pbf.pdf

PD- 95253 IRF7240PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A l Surface Mount 0.025@VGS = -4.5V -8.4A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistan

 8.3. Size:736K  cn vbsemi
 irf7240trpbf.pdf

IRF7240TRPBF www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD