IRF7309PBF-1 Todos los transistores

 

IRF7309PBF-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7309PBF-1

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SO-8

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IRF7309PBF-1 datasheet

 ..1. Size:300K  international rectifier
 irf7309pbf-1.pdf pdf_icon

IRF7309PBF-1

IRF7309TRPbF-1 HEXFET Power MOSFET N-CH P-CH V VDS 30 -30 V RDS(on) max 0.05 0.10 (@V = 10V) GS Qg (max) 25 25 nC ID SO-8 4.0 -3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Ind

 7.1. Size:456K  1
 auirf7309q.pdf pdf_icon

IRF7309PBF-1

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A

 7.2. Size:1962K  international rectifier
 irf7309qpbf.pdf pdf_icon

IRF7309PBF-1

PD - 96135A IRF7309QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch l Dual N and P Channel MOSFET S1 D1 l Surface Mount 2 7 G1 D1 l Available in Tape & Reel VDSS 30V -30V 3 6 l 150 C Operating Temperature S2 D2 l Lead-Free 4 5 RDS(on) 0.050 0.10 G2 D2 P-CHANNEL MOSFET Description Top View These HEXF

 7.3. Size:162K  international rectifier
 irf7309.pdf pdf_icon

IRF7309PBF-1

PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050 0.10 Top View Description Fifth Generation HEXFET

MOSTRAR MÁS

Otros transistores... IRF7233PBF , IRF7240PBF , IRF7241PBF , IRF7304PBF-1 , IRF7304QPBF , IRF7306QPBF , IRF7307QPBF , IRF7309IPBF , IRF730 , IRF7309QPBF , IRF730ALPBF , IRF730APBF , IRF730ASPBF , IRF730B , IRF730PBF , IRF730SPBF , IRF7313PBF-1 .

History: HCA60R290 | BRI740 | AOY2N60 | AOY66920 | 4N65KG-TND-R | BSC220N20NSFD | BSC079N03LSCG

 

 

 

 

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