IRF734PBF Todos los transistores

 ..1. Size:1781K  international rectifier
 irf734pbf.pdf

PD-95973 IRF734PbF Lead-Free 12/20/04 Document Number 91049 www.vishay.com 1 IRF734PbF Document Number 91049 www.vishay.com 2 IRF734PbF Document Number 91049 www.vishay.com 3 IRF734PbF Document Number 91049 www.vishay.com 4 IRF734PbF Document Number 91049 www.vishay.com 5 IRF734PbF Document Number 91049 www.vishay.com 6 IRF734PbF Document Number 91049 www.

 ..2. Size:113K  vishay
 irf734pbf.pdf

IRF734, SiHF734 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 450 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS Fast Switching Qg (Max.) (nC) 45 COMPLIANT Ease of Paralleling Qgs (nC) 6.6 Simple Drive Requirements Qgd (nC) 24 Lead (Pb)-free Configuration Single DESCRIPTION D Third generation Power MOS

 8.1. Size:403K  1
 auirf7341q.pdf

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

 8.2. Size:225K  1
 auirf7343q.pdf

PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l Advanced Planar Technology N-Ch P-Ch N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET V(BR)DSS 55V -55V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) typ. 0.043 0.095 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualif

 8.3. Size:156K  1
 irf7341q.pdf

PD - 94391B IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

 8.4. Size:172K  1
 auirf7342q.pdf

PD - 97640 AUTOMOTIVE GRADE AUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8 S1 D1 V(BR)DSS -55V 150 C Operating Temperature 2 7 G1 D1 Fast Switching 3 6 S2 D2 RDS(on) max. 0.105 Fully Avalanche Rated 4 5 G2 D2 Lead-Free, RoHS Compliant ID -3.4A Top View Autom

 8.5. Size:219K  international rectifier
 irf7343pbf.pdf

PD - 92547 IRF7343PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifi

 8.6. Size:136K  international rectifier
 irf7342.pdf

PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -55V 2 7 Dual P-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.105 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

 8.7. Size:158K  international rectifier
 irf7342pbf.pdf

PD - 95200 IRF7342PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual P-Channel Mosfet S1 D1 VDSS = -55V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching RDS(on) = 0.105 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc

 8.8. Size:199K  international rectifier
 irf7341gpbf.pdf

IRF7341GPbF HEXFET Power MOSFET Advanced Process Technology VDSS RDS(on) max ID Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050@VGS = 10V 5.1A 175 C Operating Temperature 0.065@VGS = 4.5V 4.42A Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free Description 1 8 S1 D1 These HEXFET Power MOSFET s in a Dual SO-8 package 2 7 ut

 8.9. Size:210K  international rectifier
 irf7343ipbf.pdf

PD - 96088 IRF7343IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectif

 8.10. Size:206K  international rectifier
 irf734.pdf

 8.11. Size:125K  international rectifier
 irf7342d2.pdf

PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -55V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET 3 6 RDS(on) = 105m S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.61V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky

 8.12. Size:143K  international rectifier
 irf7343.pdf

PD -91709 IRF7343 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced

 8.13. Size:134K  international rectifier
 irf7341.pdf

PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = 55V 2 7 Dual N-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.050 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

 8.14. Size:183K  international rectifier
 irf7342qpbf.pdf

PD - 96109 IRF7342QPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P Channel MOSFET VDSS = -55V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 150 C Operating Temperature 4 5 G2 D2 RDS(on) = 0.105 Automotive [Q101] Qualified Lead-Free Top View Description Specifically designed for Automotive applications,

 8.15. Size:137K  international rectifier
 irf7341q.pdf

PD - 94391A IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

 8.16. Size:138K  international rectifier
 irf7341ipbf.pdf

PD-95087 IRF7341IPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel Mosfet VDSS = 55V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching RDS(on) = 0.050 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc

 8.17. Size:138K  international rectifier
 irf7342d2pbf.pdf

PD- 94101A IRF7342D2 TM FETKY MOSFET & Schottky Diode l Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -55V 2 7 l Ideal For Buck Regulator Applications A K l P-Channel HEXFET 3 6 RDS(on) = 105m S D l Low VF Schottky Rectifier 4 5 G D l SO-8 Footprint Schottky Vf = 0.61V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky

 8.18. Size:178K  international rectifier
 irf7342pbf-1.pdf

IRF7342TRPbF-1 HEXFET Power MOSFET VDS -55 V 1 8 S1 D1 RDS(on) max 0.105 2 7 G1 D1 (@V = -10V) GS 3 Qg (typical) 26 nC 6 S2 D2 ID 4 5 -3.4 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En

 8.19. Size:238K  international rectifier
 irf7343qpbf.pdf

PD - 96110 IRF7343QPBF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 l Ultra Low On-Resistance 8 S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 l Available in Tape & Reel S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.050 0.105 l Lead-Free To

 8.20. Size:158K  international rectifier
 irf7341pbf.pdf

PD -95199 IRF7341PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel Mosfet S1 D1 VDSS = 55V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching RDS(on) = 0.050 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced

 8.21. Size:421K  infineon
 auirf7341q.pdf

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

 8.22. Size:323K  infineon
 auirf7343q.pdf

AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 VDSS 55V -55V Ultra Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.095 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.050 0.105 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 4.7A -3.4A Availabl

 8.23. Size:267K  infineon
 auirf7342q.pdf

AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8 S1 D1 Features -55V 2 7 G1 D1 Advanced Planar Technology 3 6 RDS(on) max. S2 D2 Low On-Resistance 0.105 4 5 G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS

 8.24. Size:2130K  slkor
 irf7341.pdf

IRF7341 60V Dual N-Channel MOSFET Description This Dual N-Channel MOSFET uses advanced trench technology and SOP-8 design to provide excellent R with low gate charge. D1 DS(on) D1 It can be used in a wide variety of applications. D2 D2 S1 G1 S2 Features G2 1) V =60V,I =5 A,R

 8.25. Size:3361K  cn vbsemi
 irf7343qtr.pdf

IRF7343QTR www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VG

 8.26. Size:1246K  cn vbsemi
 irf7343trpbf.pdf

IRF7343TRPBF www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at

 8.27. Size:856K  cn vbsemi
 irf7342tr.pdf

IRF7342TR www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V

 8.28. Size:952K  cn vbsemi
 irf7341trpbf.pdf

IRF7341TRPBF www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha

 8.29. Size:2614K  cn vbsemi
 irf7342qtr.pdf

IRF7342QTR www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top