SD2100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD2100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.3 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 0.05 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Tiempo de subida (tr): 0.4 nS
Resistencia entre drenaje y fuente RDS(on): 50 Ohm
Paquete / Cubierta: TO-72
Búsqueda de reemplazo de MOSFET SD2100
SD2100 Datasheet (PDF)
sd2100.pdf
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N-Channel Depletion ModeLateral DMOS FETLLCSD2100 / SST2100FEATURES DESCRIPTIONON Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t 1.0ns The SD2100/SST2100 is a depletion mode DMOS lateral FETrss Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c 2pf that provides ultra high speed switching with very low Low R . . . . . . .
2sd2100.pdf
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Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov
2sd2100.pdf
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SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt
ssd2104.pdf
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8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2104 - 30V 0.07 - 4.6AP-Channel MOSFETAbsolute Maximu
ssd2101.pdf
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8 SOICFEATURES1 8N/C DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesD D D D Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDS SSSD2101 30V 0.03 7.0AN-Channel MOSFETAbsolute Maximum RatingsS
ssd2106.pdf
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8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2106 - 20V 0.25 - 2.5AP-Channel MOSFETAbsolute Maximu
ssd2108.pdf
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8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2108 - 20V 0.10 - 4.3AP-Channel MOSFETAbsolute Maximu
ssd2102.pdf
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8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2102 - 20V 0.06 - 5.3AP-Channel MOSFETAbsolute Maximu
2sd2104.pdf
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2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol
2sd2106.pdf
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2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle
2sd2108.pdf
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2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2102.pdf
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2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2107.pdf
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2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d
2sd2101.pdf
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2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo
sd210de sd212de sd214de.pdf
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High-Speed AnalogN-Channel DMOS FETsSD210 / SD212 / SD214FEATURES DESCRIPTION High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with Low Feedthrough and Feedba
2sd2101.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op
2sd2104.pdf
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Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo
2sd2105.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2106.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2108.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr
2sd2107.pdf
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isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sd2101.pdf
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isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![SD2100](https://alltransistors.com/images/us.png)
![SD2100](https://alltransistors.com/images/es.png)
![SD2100](https://alltransistors.com/images/ru.png)
Liste
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