SHD224605 Todos los transistores

 

SHD224605 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SHD224605
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 390 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: TO-258

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SHD224605 Datasheet (PDF)

 ..1. Size:60K  sensitron
shd224605 shd224606.pdf

SHD224605
SHD224605

SHD224605SENSITRON SHD224606SEMICONDUCTORTECHNICAL DATADATA SHEET 812, REV. -HERMETIC POWER MOSFETN-CHANNEL(Standard and Fast-FET)DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-258 PACKAGE.SHD224605: Formerly SHD2243, N-Channel Enhancement Mode.SHD224606: Formerly SHD2243F, N-Channel Enhancement Mode with Fast Intrinsic Diode.MAXIMUM RATINGS (AT Tj

 7.1. Size:60K  sensitron
shd224622.pdf

SHD224605
SHD224605

SENSITRON SHD224622SEMICONDUCTORTECHNICAL DATADATA SHEET 4197, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 200 Volt, 80A, 36 milliohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Low package inductance-easy to drive and protect Add suffix S for S-100 screening MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPECIFIED.CRATING S

 8.1. Size:33K  sensitron
shd224805.pdf

SHD224605
SHD224605

SENSITRON SHD224805 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5159, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 60A, 55 milli-Ohm Isolated Hermetic Metal Package Very low Gate Charge Very Low RDS (on) Low package inductance-easy to drive and protect MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMB

 8.2. Size:50K  sensitron
shd224802.pdf

SHD224605
SHD224605

SHD224802 SENSITRON SHDCG224802 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: 600 Volt, 0.07 Ohm, 47A MOSFET Isolated Hermetic Metal Package Low RDS (on); Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings Ceramic Seals with Glidcop leads (SHDCG224802) MAXIMUM RATINGS ALL RATINGS AR

 8.3. Size:50K  sensitron
shd224502.pdf

SHD224605
SHD224605

SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM150 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOU

 8.4. Size:139K  sensitron
shd224701.pdf

SHD224605
SHD224605

SHD224701 SENSITRON SHDCG224701 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4151, REV. B LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 100 Volt, 0.011 Ohm, 90A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Ceramic Seals with Glidcop leads (SHDCG224701) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIF

 8.5. Size:60K  sensitron
shd224514.pdf

SHD224605
SHD224605

SENSITRON SHD224514SEMICONDUCTORTECHNICAL DATADATA SHEET 1172, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXFD80N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC

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