SHD225503 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SHD225503

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 27.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 115 nC

Tiempo de elevación (tr): 190 nS

Conductancia de drenaje-sustrato (Cd): 700 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO-254

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SHD225503 Datasheet (PDF)

1.1. shd225503.pdf Size:62K _upd-mosfet

SENSITRON SHD225503 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 665, REV - Formerly Part Number SHD22510 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID - - 27.4 Amps C

2.1. shd225505.pdf Size:60K _upd-mosfet

SENSITRON SHD225505 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number -- SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE

2.2. shd225509.pdf Size:37K _upd-mosfet

SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 6A, 2 Ohm, MOSFET • Isolated Hermetic Metal Package • Fast intrinsic Rectifier • Low RDS (on) • Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE S

2.3. shd225502.pdf Size:61K _upd-mosfet

SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS (on) œ Equivalent to IRFM150 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GAT

2.4. shd225505b.pdf Size:60K _upd-mosfet

SENSITRON SHD225505B SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID - - 12

2.5. shd225508.pdf Size:59K _upd-mosfet

SENSITRON SHD225508 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 229, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 6.0A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ON-STATE

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