IRL2505S Todos los transistores

PD - 91326D IRL2505S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

PD - 95577 IRL2505LPbF IRL2505SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL2505S) D VDSS = 55V l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier ut

PD - 95577 IRL2505LPbF IRL2505SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL2505S) D VDSS = 55V l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier ut

isc N-Channel MOSFET Transistor IRL2505S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

PD - 91325C IRL2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

PD -95622 IRL2505PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2505 IIRL2505 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R